BSIM-SOI Industry-Standard Compact Model

Nyhet

Surface Potential-Based FET Model for RFIC Design

Häftad, Engelska, 2026

AvChetan Kumar Dabhi,Debashish Nandi,Dinesh Rajasekharan,Chenming Hu,Yogesh Singh Chauhan,Ananth Sundaram

2 759 kr

Kommande

BSIM-SOI Industry-Standard Compact Model: Surface Potential-Based FET Model for RFIC Design provides complete coverage of compact modeling and design techniques specific to SOI transistors. The book is designed to be the first comprehensive guide that thoroughly explains the industry-standard BSIM-SOI compact model, along with the unique modeling and RF design techniques necessary for the accurate extraction and implementation of the industry standard BSIM-SOI model. This book will be a valuable reference for the expanding field of SOI technology, catering specifically to circuit designers, device engineers, academic researchers, and students.
This book will equip designers, engineers, and researchers with the knowledge and tools required to optimize SOI-based circuit performance and system integration. The book explains fundamental surface-potential calculations and addresses various real device effects, such as floating body, self-heating, dynamic depletion effects, and layout influences to accurately replicate realistic device behavior. Additionally, the step-by-step parameter extraction procedures for the BSIM-SOI model are outlined, and the results of benchmark tests are also presented.

Serves as an invaluable and practical reference for comprehending the operational intricacies and underlying physics of SOI devices
Comprehensively covers all facets of the BSIM-SOI model, offering insights directly from model developers themselves
Offers detailed insights into, and solutions for, the challenges associated with extracting parameters from SOI devices due to factors such as conventional and gate-induced floating body effects, dynamic depletion effects, etc.
Provides clear guidance (focusing primarily on the modeling process) on the measurement data needed to extract BSIM-SOI model parameters
Discusses RF switch and power amplifier design, linking this to device parameters via physics-based simulation models

Produktinformation

Utgivningsdatum2026-11-01
Mått152 x 229 x undefined mm
FormatHäftad
SpråkEngelska
SerieWoodhead Publishing Series in Electronic and Optical Materials
Antal sidor350
FörlagElsevier Science
ISBN9780443439049

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Chetan Kumar Dabhi is a Staff Engineer at pSemi Corporation, San Diego, United States. He specializes in developing and supporting industry-standard compact models for diverse semiconductor devices, including SOI FETs, FinFETs, and Bulk FETs (BSIM-SOI, BSIM-IMG, BSIM-BULK, and BSIM4).Debashish Nandi is a Researcher in the Department of Electrical Engineering at the Indian Institute of Technology Kanpur, India. His research focuses on compact modelling and device characterization of various nanoscale devices, primarily SOI MOSFETs for RF applications for advanced communication standards like 5G and 6G.Dinesh Rajasekharan is a Postdoctoral Researcher in the BSIM group at the University of California Berkeley, United States. His research covers semiconductor device compact model development, neuromorphic computing using emerging semiconductor devices, and using neural networks in electronics applications.Chenming Hu is TSMC Distinguished Chair Professor Emeritus at the University of California Berkeley, United States. He was the Chief Technology Officer of TSMC. He received the US Presidential Medal of Technology and Innovation from Pres. Barack Obama for developing the first 3D thin-body transistor FinFET, MOSFET reliability models and leading the development of BSIM industry standard transistor model that is used in designing most of the integrated circuits in the world. He is a member of the US Academy of Engineering, the Chinese Academy of Science, and Academia Sinica. He received the highest honor of IEEE, the IEEE Medal of Honor, and its Andrew Grove Award, Solid Circuits Award, and the Nishizawa Medal. He also received the Taiwan Presidential Science Prize and UC Berkeley’s highest honor for teaching – the Berkeley Distinguished Teaching Award.Yogesh Singh Chauhan is a Chair Professor in the Department of Electrical Engineering at the Indian Institute of Technology Kanpur, India. He is the developer of several industry standard models: ASM-HEMT, BSIM-BULK (formerly BSIM6), BSIM-CMG, BSIM-IMG, BSIM4 and BSIM-SOI models. His research group is involved in developing compact models for GaN transistors, FinFET, nanosheet/gate-all-around FETs, FDSOI transistors, negative capacitance FETs and 2D FETs. His research interests are RF characterization, modeling, and simulation of semiconductor devices.Ananth Sundaram is a Deputy Director at GlobalFoundries, Bengaluru, India. He is a technology professional with experience in semiconductor modeling, design, and measurement.

1. General overview of SOI models and technology trends2. Core model formulation3. Real device effects4. Terminal charges and capacitances5. Leakage currents6. Noise models in BSIM-SOI7. Body contact parasitics – modeling approach8. Self-Heating and Temperature Effects9. Cutting-Edge RF Modeling and Validation Techniques10. Integrating BSIM-SOI Models in Analog, Digital, and RF Designs11. Parameter Extraction12. Model Quality testing