Analog Devices and Circuits 1

Analog Devices

Inbunden, Engelska, 2023

1 839 kr

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At the end of the Second World War, a new technological trend was born: integrated electronics. This trend relied on the enormous rise of integrable electronic devices.Analog Devices and Circuits is composed of two volumes: the first deals with analog components, and the second with associated analog circuits. The goal here is not to create an overly comprehensive analysis, but rather to break it down into smaller sections, thus highlighting the complexity and breadth of the field.This first volume, after a brief history, describes the two main devices, namely bipolar transistors and MOS, with particular importance given to the modeling aspect. In doing so, we deal with new devices dedicated to radio frequency, which touches on nanoelectronics. We will also address some of the notions related to quantum mechanics. Finally, Monte Carlo methods, by essence statistics, will be introduced, which have become more and more important since the middle of the twentieth century.The second volume deals with the circuits that "use" the analog components that were introduced in Volume 1. Here, a particular emphasis is placed on the main circuit: the operational amplifier.

Produktinformation

Utgivningsdatum2023-12-13
Mått156 x 234 x 16 mm
Vikt723 g
FormatInbunden
SpråkEngelska
Antal sidor272
FörlagISTE Ltd and John Wiley & Sons Inc
ISBN9781786308993

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Elektronik och kommunikationer inom Naturvetenskap och teknik

Preface ixIntroduction xiiiChapter 1 Bipolar Junction Transistor 11.1 Introduction 11.1.1 A schematic technological embodiment of an integrated bipolar junction transistor 21.2 Transistor effect 41.2.1 Flows and currents 51.2.2 Compromises for bipolar junction transistor 61.2.3 Configurations and associated current gains 71.3 Bipolar junction transistor: some calculations 91.3.1 Various modes of operation 151.4 The NPN transistor; Ebers–Moll model (1954: Jewell James Ebers and John L Moll) 161.4.1 Gummel curves 181.4.2 Consideration of second-order effects for the static model 191.4.3 Early curves 201.4.4 Base width modulation; Early effect 201.4.5 Ebers–Moll model wide signals 221.4.6 Current gain 261.5 Simple bipolar junction transistor model 271.6 Network of static characteristics of the bipolar junction transistor 271.6.1 Common emitter configuration 311.6.2 Common emitter configuration with emitter degeneration 341.7 Some applications 351.7.1 Current mirrors 351.7.2 Differential pair 381.7.3 Output stage 411.8 Application: operational amplifier 431.9 BiCMOS 43Chapter 2 Mosfet 452.1 Introduction 452.1.1 Base structure 452.1.2 Working principle 462.2 MOS capability: electric model and curve C(V) 472.3 Different types of MOS transistors 492.4 A CMOS technological process 502.5 Electric modeling of the NMOS enhancement transistor 522.6 Off state 522.7 Linear or ohmic or unsaturated regime 522.7.1 Saturation regime 532.7.2 High saturation velocity 532.7.3 Static characteristics 542.8 Applications 562.8.1 Digital inverter 562.8.2 Active resistor 582.8.3 MOS Single current mirror 592.8.4 MOS differential amplifier 602.9 Explained technological steps of a CMOS 60Chapter 3 Devices Dedicated to Radio Frequency: Toward Nanoelectronics 753.1 Introduction 753.2 Model for HBT SiGeC and device structure 763.2.1 Modeling the drift–diffusion equation 763.3 MOS of the future? 833.3.1 Introduction 833.3.2 Dgmos 843.3.3 Transport in nanoscale MOSFETs 853.3.4 Numerical methods 873.4 Conclusion 1113.5 MATLAB use 1123.5.1 Computer-aided modelling and simulations: synopsis 1123.5.2 Calculation of the second elementary member ρ 1 1393.6 Conclusion 185Appendix 187References 211Index 213