Wide Band Gap Semiconductor Nanowires 1

Low-Dimensionality Effects and Growth

Inbunden, Engelska, 2014

Av Vincent Consonni, Guy Feuillet, France) Consonni, Vincent (INP-CNRS, Grenoble, France) Feuillet, Guy (CEA-LETI, Grenoble, Robert Baptist

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GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanismsof ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Produktinformation

Utgivningsdatum2014-07-29
Mått163 x 241 x 28 mm
Vikt735 g
FormatInbunden
SpråkEngelska
Antal sidor352
FörlagISTE Ltd and John Wiley & Sons Inc
ISBN9781848215979

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Vincent Consonni is Associate Scientist at CNRS (French National Center for Research) in France. His research has focused on the physics of crystal growth and of condensed matter for micro- and nano-structures involving compound semiconductors such as CdTe, GaN, ZnO and SnO2. He is currently working on transparent conductive materials and ZnO nanowire-based solar cells. He has published approximately 30 articles in peer-reviewed journals.Guy Feuillet is Senior Scientist at CEA (French Atomic and Alternative Energy Commission), France. He has initiated and coordinated many internal programs (GaN nanostructures, X-ray detectors for medical imaging, solid state lighting) and R&D programs during his work at CEA. He is a permanent member of the scientific advisory board at CEA/LETI, and a member of the selection committee for the French National Agency for Research (ANR). He has published about 120 papers in peer-reviewed journals.

Preface xiPart 1 GaN and ZnO Nanowires: Low-Dimensionality Effects 1Chapter 1 Quantum and Optical Confinement 3Le Si DangChapter 2 Stress Relaxation in Nanowires with Heterostructures 25Frank GlasChapter 3 Surface-Related Optical Properties of GaN-Based Nanowires 59Pierre LefebvreChapter 4 Surface Related Optical Properties of ZnO Nanowires 81Tobias Voss and Jürgen GutowskiChapter 5 Doping and Transport 99Julien Pernot, Fabrice Donatini and Pierre TchoulfianChapter 6 Microstructure of Group III-N Nanowires 125Achim Trampert, Xiang Kong, Esperanza Luna, Javier Grandal and Bernd JenichenPart 2 Nucleation and Growth Mechanisms of GaN and ZnO Nanowires 157Chapter 7 Ni Collector-Induced Growth of GaN Nanowire on C-Plane Sapphere by Plama-Assisted Molecular Beam Epitaxy 159Caroline ChèzeChapter 8 Self-Induced Growth of GaN Nanowires by Molecular Beam Epitaxy 177Vincent ConsonniChapter 9 Selective Area Growth of GaN Nanowires by Plama-Assisted Molecular Beam Epitaxy 215Miguel A Sanchez-Garcia, steven Albert, Ana M. Bengoechea-Encabo, Francesca Barbagini and Enrique CallejaChapter 10 Metal-Organic Vapor Phase Epitaxy Growth of GaN Nanorods 245Joël EymeryChapter 11 Metal-Organic Chemical Vaport Deposition Growth of ZnO Nanowires 265Vincent SalletChapter 12 Pulsed-Laser Deposition of ZnO Nanowires 303Christoph Peter Dietrich and Marius GrundmannChapter 13 Preparation of ZnO Nanorods and Nanowires by Wet Chemistry 325Thierry PauportéList of Authors 379