Vacuum Nanoelectronic Devices

Novel Electron Sources and Applications

Inbunden, Engelska, 2015

AvAnatoliy Evtukh,Hans Hartnagel,Oktay Yilmazoglu,Hidenori Mimura,Dimitris Pavlidis,Kyiv) Evtukh, Anatoliy (National Academy of Sciences of Ukraine,Germany) Hartnagel, Hans (Technische Universitat Darmstadt,Germany) Yilmazoglu, Oktay (Technische Universitat Darmstadt,Japan) Mimura, Hidenori (Shizuoka University, Hamamatsu,USA) Pavlidis, Dimitris (Boston University

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Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed.Key features:• In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources.• Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers.• Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing.• New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics.This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.

Produktinformation

Utgivningsdatum2015-09-18
Mått175 x 252 x 27 mm
Vikt857 g
FormatInbunden
SpråkEngelska
Antal sidor512
FörlagJohn Wiley & Sons Inc
ISBN9781119037958

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Preface xi Part I THEORETICAL BACKGROUNDS OF QUANTUM ELECTRON SOURCES1 Transport through the Energy Barriers: Transition Probability 31.1 Transfer Matrix Technique 31.2 Tunneling through the Barriers and Wells 71.2.1 The Particle Moves on the Potential Step 71.2.2 The Particle Moves above the Potential Barrier 131.2.3 The Particle Moves above the Well 161.2.4 The Particle Moves through the Potential Barrier 181.3 Tunneling through Triangular Barrier at Electron Field Emission 221.4 Effect of Trapped Charge in the Barrier 241.5 Transmission Probability in Resonant Tunneling Structures: Coherent Tunneling 281.6 Lorentzian Approximation 321.7 Time Parameters of Resonant Tunneling 341.8 Transmission Probability at Electric Fields 381.9 Temperature Effects 421.9.1 One Barrier 421.9.2 Double-Barrier Resonance Tunneling Structure 452 Supply Function 482.1 Effective Mass Approximation 482.2 Electron in Potential Box 492.3 Density of States 522.3.1 Three-Dimension (3D) Case 522.3.2 Two-Dimension (2D) Case 582.3.3 One-Dimension (1D) Case 622.3.4 Zero Dimension (0D) Case 642.4 Fermi Distribution Function and Electron Concentration 662.4.1 Electron Concentration for 3D Structures 672.4.2 Electron Concentration for 2D Structures 712.5 Supply Function at Electron Field Emission 712.6 Electron in Potential Well 732.6.1 Quantum Well with Parabolic Shape of the Potential 762.7 Two-Dimensional Electron Gas in Heterojunction GaN-AlGaN 792.8 Electron Properties of Quantum-Size Semiconductor Films 823 Band Bending and Work Function 873.1 Surface Space-Charge Region 873.2 Quantization of the Energy Spectrum of Electrons in Surface Semiconductor Layer 913.3 Image Charge Potential 963.4 Work Function 993.4.1 Energy of Ionic Cores (εion) 1023.4.2 Exchange-Correlation Potential (Uxc) 1033.4.3 Dipole Term (ΔΦ) 1043.4.4 Work Function of Semiconductor 1063.4.5 Work Function of Cathode with Coating 1073.5 Field and Temperature Dependences of Barrier Height 1093.6 Influence of Surface Adatoms on Work Function 1104 Current through the Barrier Structures 1194.1 Current through One Barrier Structure 1194.1.1 Case 1: High Bias 1224.1.2 Case 2: High Bias and Low Temperature 1224.1.3 Case 3: Small Bias: Linear Response 1224.1.4 Case 4: Small Bias and Low Temperature 1234.2 Field Emission Current 1234.3 Electron Field Emission from Semiconductors 1274.4 Current through Double Barrier Structures 1344.4.1 Coherent Resonant Tunneling 1344.4.2 Sequential Tunneling 1394.5 Electron Field Emission from Multilayer Nanostructures and Nanoparticles 1424.5.1 Resonant Tunneling at Electron Field Emission from Nanostructures 1424.5.2 Two-Step Electron Tunneling through Electronic States in a Nanoparticle 1504.5.3 Single-Electron Field Emission 1595 Electron Energy Distribution 1725.1 Theory of Electron Energy Distribution 1725.2 Experimental Set Up 1755.3 Peculiarities of Electron Energy Distribution Spectra at Emission from Semiconductors 1775.3.1 Electron Energy Distribution of Electrons Emitted from Semiconductors 1795.4 Electron Energy Distribution at Emission from Spindt-Type Metal Microtips 1805.5 Electron Energy Distribution of Electrons Emitter from Silicon 1855.5.1 Electron Energy Distribution of Electrons from Silicon Tips and Arrays 1855.5.2 Electron Energy Distribution of Electrons from Nanocrystalline Silicon 193Part II NOVEL ELECTRON SOURCES WITH QUANTUM EFFECTS6 Si Based Quantum Cathodes 2016.1 Introduction 2016.2 Electron Field Emission from Porous Silicon 2026.3 Electron Field Emission from Silicon with Multilayer Coating 2076.4 Peculiarities of Electron Field Emission from Si Nanoparticles 2086.4.1 Electron Field Emission from Nanocomposite SiOx(Si) and SiO2(Si) Films 2086.4.2 Electron Field Emission from Si Nanocrystalline Films 2126.4.3 Laser Produced Silicon Tips with SixOyNz(Si) Nanocomposite Film 2156.5 Formation of Conducting Channels in SiOx Coating Film 2176.6 Electron Field Emission from Si Nanowires 2226.7 Metal-Insulator-Metal Emitters 2276.7.1 Effect of the Top Electrode 2376.8 Conclusion 2407 GaN Based Quantum Cathodes 2467.1 Introduction 2467.2 Electron Sources with Wide Bandgap Semiconductor Films 2477.2.1 AlGaN Based Electron Sources 2497.2.2 Solid-State Field Controlled Emitter 2557.2.3 Polarization Field Emission Enhancement Model 2577.2.4 Emission from Nanocrystalline GaN Films 2587.2.5 Graded Electron Affinity Electron Source 2627.3 Resonant Tunneling of Field Emitted Electrons through Nanostructured Cathodes 2637.3.1 Resonant-Tunneling AlxGa1−xN-GaN Structures 2637.3.2 Multilayer Planar Nanostructured Solid-State Field-Controlled Emitter 2667.3.3 Geometric Nanostructured AlGaN/GaN Quantum Emitter 2707.3.4 AlN/GaN Multiple-Barrier Resonant-Tunneling Electron Emitter 2737.4 Field Emission from GaN Nanorods and Nanowires 2777.4.1 Intervalley Carrier Redistribution at EFE from Nanostructured Semiconductors 2777.4.2 Electron Field Emission from GaN Nanowire Film 2887.4.3 Electron Field Emission from Patterned GaN Nanowire Film 2937.4.4 Electron Field Emission Properties of Individual GaN Nanowires 2957.4.5 Photon-Assisted Field Emission from GaN Nanorods 2997.5 Conclusions 3058 Carbon-Based Quantum Cathodes 3148.1 Introduction 3148.2 Diamond and Diamond Film Emitters 3158.2.1 Negative Electron Affinity 3158.2.2 Emission from Diamond and Diamond Films 3188.2.3 Models of EFE from Diamond 3228.3 Diamond-Like Carbon Film Emitters 3248.3.1 Electrically Nanostructured Heterogeneous Emitters 3248.3.2 Nanostructured Diamond-Like Carbon Films 3268.3.3 Electron Field Emission from DLC Films 3288.3.4 Model of EFE from Si Tips Coated with DLC Film 3308.3.5 Electron Field Emission from Tips Coated with Ultrathin DLC Films 3348.3.6 Formation of Conductive Nanochannels in DLC Film 3368.4 Carbon Nanotube Emitters 3408.4.1 The Peculiarities of Electron Field Emission from CNTs 3418.4.2 Stability of Electron Field Emission from CNTs 3468.4.3 Models of Field Emission from CNTs 3508.5 Electron Emission from Graphene and Nanocarbon 3528.5.1 Electron Emission from Graphene 3528.5.2 Electron Emission from CNT-Graphene Composites 3558.5.3 Electron Emission from Nanocarbon 3588.6 Conclusion 3629 Quantum Electron Sources for High Frequency Applications 3759.1 Introduction 3759.2 High Frequency Application of Resonant Tunneling Diode 3769.3 Field Emission Resonant Tunneling Diode 3809.3.1 Direct Emission Current 3819.3.2 Microwave Characteristics 3839.3.3 Calculation of the Direct Emission Current 3859.3.4 Calculation of Microwave Parameters 3869.4 Generation of THz Signals in Field Emission Vacuum Devices 3919.5 AlGaN/GaN Superlattice for THz Generation 3989.6 Gunn Effect at Electron Field Emission 4159.7 Field Emission Microwave Sources 4209.7.1 Modulation of Gated FEAs 4229.7.2 Current Density 4329.7.3 CNT FEAs 4369.8 Conclusion 440Index 447