Solid State Electronic Devices

Inbunden, Engelska, 2014

4 059 kr

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Solid State Electronic Devices is intended for undergraduate electrical engineering students or for practicing engineers and scientists interested in updating their understanding of modern electronics

One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications.

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Teaching and Learning Experience

This program will provide a better teaching and learning experience–for you and your students. It will help:

Provide a Sound Understanding of Current Semiconductor Devices: With this background, students will be able to see how their applications to electronic and optoelectronic circuits and systems are meaningful.
Incorporate the Basics of Semiconductor Materials and Conduction Processes in Solids: Most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices.
Develop Basic Semiconductor Physics Concepts: With this background, students will be better able to understand current and future devices.

Produktinformation

Utgivningsdatum2014-07-11
Mått183 x 238 x 23 mm
Vikt900 g
FormatInbunden
SpråkEngelska
Antal sidor624
Upplaga7
FörlagPearson Education
ISBN9780133356038

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Ben G. Streetman is Dean Emeritus of the College of Engineering at The University of Texas at Austin. He is an Emeritus Professor of Electrical and Computer Engineering, where he held the Dula D. Cockrell Centennial Chair. He was the founding Director of the Microelectronics Research Center (1984—96). His teaching and research interests involve semiconductor materials and devices. After receiving a Ph.D. from The University of Texas at Austin (1966) he was on the faculty (1966–1982) of the University of Illinois at Urbana-Champaign. He returned to The University of Texas at Austin in 1982. His honors include the Education Medal of the Institute of Electrical and Electronics Engineers (IEEE), the Frederick Emmons Terman Medal of the American Society for Engineering Education (ASEE), and the Heinrich Welker Medal from the International Conference on Compound Semiconductors. He is a member of the National Academy of Engineering and the American Academy of Arts and Sciences. He is a Fellow of the IEEE and the Electrochemical Society. He has been honored as a Distinguished Alumnus of The University of Texas at Austin and as a Distinguished Graduate of the UT College of Engineering. He has received the General Dynamics Award for Excellence in Engineering Teaching, and was honored by the Parents’ Association as a Teaching Fellow for outstanding teaching of undergraduates. He has served on numerous panels and committees in industry and government, and several corporate boards. He has published more than 290 articles in the technical literature. Thirty five students of Electrical and Computer Engineering have received their Ph.D. under his supervision. Sanjay Kumar Banerjee is the Cockrell Chair Professor of Electrical and Computer Engineering, and Director of the Microelectronics Research Center at The University of Texas at Austin. He has more than 900 archival refereed publications and conference papers, 30 U.S. patents, and has supervised 50 Ph.D. students. His honors include the NSF Presidential Young Investigator Award (1988), ECS Callinan Award (2003) and IEEE Grove Award (2014). He is a Fellow of IEEE, APS and AAAS.

ABOUT THE AUTHORS XvII1 CRYSTAL PROPERTIES AND GROWTHOF SEMICONDUCTORS 11.1 Semiconductor Materials 11.2 Crystal Lattices 31.3 Bulk Crystal Growth 121.4 epitaxial Growth 171.2.1 Periodic Structures 31.2.2 Cubic Lattices 51.2.3 Planes and directions 71.2.4 The diamond Lattice 91.3.1 Starting Materials 121.3.2 Growth of Single-Crystal Ingots 131.3.3 wafers 141.3.4 doping 161.4.1 Lattice-Matching in epitaxial Growth 171.4.2 vapor-Phase epitaxy 191.4.3 Molecular Beam epitaxy 221.5 wave Propagation in discrete, Periodic Structures 242 ATOMS AND ELECTRONS 322.1 Introduction to Physical Models 332.2 experimental Observations 342.3 The Bohr Model 372.4 Quantum Mechanics 412.2.1 The Photoelectric effect 342.2.2 Atomic Spectra 362.5 Atomic Structure and the Periodic Table 492.4.1 Probability and the Uncertainty Principle 412.4.2 The Schrödinger wave equation 432.4.3 Potential well Problem 452.4.4 Tunneling 482.5.1 The hydrogen Atom 502.5.2 The Periodic Table 523 ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS 633.1 Bonding Forces and energy Bands in Solids 633.2 Charge Carriers in Semiconductors 743.3 Carrier Concentrations 893.4 drift of Carriers in electric and Magnetic Fields 1003.1.1 Bonding Forces in Solids 643.1.2 energy Bands 663.1.3 Metals, Semiconductors, and Insulators 693.1.4 direct and Indirect Semiconductors 703.1.5 variation of energy Bands with Alloy Composition 723.2.1 electrons and holes 743.2.2 effective Mass 793.2.3 Intrinsic Material 833.2.4 extrinsic Material 843.2.5 electrons and holes in Quantum wells 873.3.1 The Fermi Level 893.3.2 electron and hole Concentrations at equilibrium 923.3.3 Temperature dependence of Carrier Concentrations 973.3.4 Compensation and Space Charge neutrality 993.4.1 Conductivity and Mobility 1003.4.2 drift and Resistance 1053.4.3 effects of Temperature and doping on Mobility 1063.4.4 high-Field effects 1093.4.5 The hall effect 1093.5 Invariance of the Fermi Level at equilibrium 1114 EXCESS CARRIERS IN SEMICONDUCTORS 1224.1 Optical Absorption 1224.2 Luminescence 1254.3 Carrier Lifetime and Photoconductivity 1284.4 diffusion of Carriers 1374.2.1 Photoluminescence 1264.2.2 electroluminescence 1284.3.1 direct Recombination of electrons and holes 1294.3.2 Indirect Recombination; Trapping 1314.3.3 Steady State Carrier Generation; Quasi-Fermi Levels 1344.3.4 Photoconductive devices 1364.4.1 diffusion Processes 1384.4.2 diffusion and drift of Carriers; Built-in Fields 1404.4.3 diffusion and Recombination; The Continuity equation 1434.4.4 Steady State Carrier Injection; diffusion Length 1454.4.5 The haynes–Shockley experiment 1474.4.6 Gradients in the Quasi-Fermi Levels 1505 JUNCTIONS1595.1 Fabrication of p-n Junctions 1595.2 equilibrium Conditions 1745.3 Forward- and Reverse-Biased 5.4 Reverse-Bias Breakdown 2005.5 Transient and A-C Conditions 2095.6 deviations from the Simple Theory 2225.7 Metal–Semiconductor Junctions 2315.1.1 Thermal Oxidation 1605.1.2 diffusion 1615.1.3 Rapid Thermal Processing 1635.1.4 Ion Implantation 1645.1.5 Chemical vapor deposition (Cvd) 1675.1.6 Photolithography 1685.1.7 etching 1715.1.8 Metallization 1735.2.1 The Contact Potential 1755.2.2 equilibrium Fermi Levels 1805.2.3 Space Charge at a Junction 180Junctions; Steady State Conditions 1855.3.1 Qualitative description of Current Flow at a Junction 1855.3.2 Carrier Injection 1895.3.3 Reverse Bias 1985.4.1 Zener Breakdown 2015.4.2 Avalanche Breakdown 2025.4.3 Rectifiers 2055.4.4 The Breakdown diode 2085.5.1 Time variation of Stored Charge 2095.5.2 Reverse Recovery Transient 2125.5.3 Switching diodes 2165.5.4 Capacitance of p-n Junctions 2165.5.5 The varactor diode 2215.6.1 effects of Contact Potential on Carrier Injection 2235.6.2 Recombination and Generation in the Transition Region 2255.6.3 Ohmic Losses 2275.6.4 Graded Junctions 2285.7.1 Schottky Barriers 2315.7.2 Rectifying Contacts 2335.7.3 Ohmic Contacts 2355.7.4 Typical Schottky Barriers 2375.8 heterojunctions 2386 FIELD-EFFECT TRANSISTORS 2576.1 Transistor Operation 2586.2 The Junction FeT 2606.3 The Metal—Semiconductor FeT 2676.4 The Metal—Insulator—Semiconductor FeT 2716.5 The MOS Field-effect Transistor 2996.6 Advanced MOSFeT Structures 3306.1.1 The Load Line 2586.1.2 Amplification and Switching 2596.2.1 Pinch-off and Saturation 2616.2.2 Gate Control 2636.2.3 Current—voltage Characteristics 2656.3.1 The GaAs MeSFeT 2676.3.2 The high electron Mobility Transistor (heMT) 2686.3.3 Short Channel effects 2706.4.1 Basic Operation and Fabrication 2716.4.2 The Ideal MOS Capacitor 2756.4.3 effects of Real Surfaces 2866.4.4 Threshold voltage 2896.4.5 MOS Capacitance—voltage Analysis 2916.4.6 Time-dependent Capacitance Measurements 2956.4.7 Current—voltage Characteristics of MOS Gate Oxides 2966.5.1 Output Characteristics 2996.5.2 Transfer Characteristics 3026.5.3 Mobility Models 3056.5.4 Short Channel MOSFeT I—V Characteristics 3076.5.5 Control of Threshold voltage 3096.5.6 Substrate Bias effects–the “body” effect 3126.5.7 Subthreshold Characteristics 3166.5.8 equivalent Circuit for the MOSFeT 3186.5.9 MOSFeT Scaling and hot electron effects 3216.5.10 drain-Induced Barrier Lowering 3256.5.11 Short Channel effect and narrow width effect 3276.5.12 Gate-Induced drain Leakage 3296.6.1 Metal Gate-high-k 3306.6.2 enhanced Channel Mobility Materials and Strained Si FeTs 3316.6.3 SOI MOSFeTs and FinFeTs 3337 BIPOLAR JUNCTION TRANSISTORS 3487.1 Fundamentals of BJT Operation 3487.2 Amplification with BJTs 3527.3 BJT Fabrication 3557.4 Minority Carrier distributions and Terminal Currents 3587.5 Generalized Biasing 3677.6 Switching 3757.7 Other Important effects 3807.8 Frequency Limitations of Transistors 3947.4.1 Solution of the diffusion equation in the Base Region 3597.4.2 evaluation of the Terminal Currents 3617.4.3 Approximations of the Terminal Currents 3647.4.4 Current Transfer Ratio 3667.5.1 The Coupled-diode Model 3687.5.2 Charge Control Analysis 3737.6.1 Cutoff 3767.6.2 Saturation 3777.6.3 The Switching Cycle 3787.6.4 Specifications for Switching Transistors 3797.7.1 drift in the Base Region 3817.7.2 Base narrowing 3827.7.3 Avalanche Breakdown 3837.7.4 Injection Level; Thermal effects 3857.7.5 Base Resistance and emitter Crowding 3867.7.6 Gummel—Poon Model 3887.7.7 Kirk effect 3917.8.1 Capacitance and Charging Times 3947.8.2 Transit Time effects 3977.8.3 webster effect 3987.8.4 high-Frequency Transistors 3987.9 heterojunction Bipolar Transistors 4008 OPTOELECTRONIC DEVICES 4108.1 Photodiodes 4108.1.1 Current and voltage in an Illuminated Junction 4118.1.2 Solar Cells 4148.1.3 Photodetectors 4178.1.4 Gain, Bandwidth, and Signal-to-noise Ratio of Photodetectors 4198.2 Light-emitting diodes 4228.3 Lasers 4308.4 Semiconductor Lasers 4348.2.1 Light-emitting Materials 4238.2.2 Fiber-Optic Communications 4278.4.1 Population Inversion at a Junction 4358.4.2 emission Spectra for p-n Junction Lasers 4378.4.3 The Basic Semiconductor Laser 4388.4.4 heterojunction Lasers 4398.4.5 Materials for Semiconductor Lasers 4428.4.6 Quantum Cascade Lasers 4449 INTEGRATED CIRCUITS 4529.1 Background 4539.2 evolution of Integrated Circuits 4569.3 Monolithic device elements 4599.1.1 Advantages of Integration 4539.1.2 Types of Integrated Circuits 4559.4 Charge Transfer devices 4809.5 Ultra Large-Scale Integration (ULSI) 4859.6 Testing, Bonding, and Packaging 5109.3.1 CMOS Process Integration 4599.3.2 Integration of Other Circuit elements 4749.4.1 dynamic effects in MOS Capacitors 4819.4.2 The Basic CCd 4829.4.3 Improvements on the Basic Structure 4839.4.4 Applications of CCds 4849.5.1 Logic devices 4899.5.2 Semiconductor Memories 4979.6.1 Testing 5119.6.2 wire Bonding 5119.6.3 Flip-Chip Techniques 5159.6.4 Packaging 51510 HIGH-FREQUENCY, HIGH-POWER ANDNANOELECTRONIC DEVICES 52110.1 Tunnel diodes 52110.2 The IMPATT diode 52510.3 The Gunn diode 52810.1.1 degenerate Semiconductors 52110.3.1 The Transferred-electron Mechanism 52810.3.2 Formation and drift of Space Charge domains 53110.4 The p-n-p-n diode 53310.5 The Semiconductor-Controlled Rectifier 53910.6 Insulated-Gate Bipolar Transistor 54110.7 nanoelectronic devices 54410.4.1 Basic Structure 53310.4.2 The Two-Transistor Analogy 53410.4.3 variation of a with Injection 53510.4.4 Forward-Blocking State 53610.4.5 Conducting State 53710.4.6 Triggering Mechanisms 53810.5.1 Turning off the SCR 54010.7.1 Zero-dimensional Quantum dots 54410.7.2 One-dimensional Quantum wires 54610.7.3 Two-dimensional Layered Crystals 54710.7.4 Spintronic Memory 54810.7.5 nanoelectronic Resistive Memory 550AppendIcesI. definitions of Commonly Used Symbols 555II. Physical Constants and Conversion Factors 559III. Properties of Semiconductor Materials 560Iv. derivation of the density of States in the Conduction v. derivation of Fermi—dirac Statistics 566vI. dry and wet Thermal Oxide Thickness Grown on vII. Solid Solubilities of Impurities in Si 571vIII. diffusivities of dopants in Si and SiO2 572IX. Projected Range and Straggle as Function of Implant Answers to Selected Self Quiz Questions 576Index 581Band 561Si (100) as a Function of Time and Temperature 569energy in Si 574