Silicon Technologies

Ion Implantation and Thermal Treatment

Inbunden, Engelska, 2011

Av Annie Baudrant, France) Baudrant, Annie (CEA-LETI, Grenoble

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This book has been written to provide newly arrived engineers in a silicon foundry environment with a comprehensive background in the fundamental physical and chemical basis for major front-end silicon treatments, such as oxidation, epitaxy, ion implantation and impurities diffusion, as well as giving a survey of the major types of equipment used in integrated circuit (IC) chip foundries.Techniques include various forms of chemical vapor deposition (CVD), epitaxy, thin film technologies, lithography, masking, and other nanotechnologies.As well as the target audience, the book will also be of great interest to engineers and advanced students in all these and related fields of electrical engineering, materials science, and manufacturing.

Produktinformation

Utgivningsdatum2011-06-10
Mått163 x 241 x 26 mm
Vikt671 g
FormatInbunden
SpråkEngelska
Antal sidor368
FörlagISTE Ltd and John Wiley & Sons Inc
ISBN9781848212312

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Elektronik och kommunikationer inom Naturvetenskap och teknik

Preface xiAnnie BAUDRANTChapter 1. Silicon and Silicon Carbide Oxidation 1Jean-Jacques GANEM and Isabelle TRIMAILLE1.1. Introduction 11.2. Overview of the various oxidation techniques 31.3. Some physical properties of silica 171.4. Equations of atomic transport during oxidation 281.5. Is it possible to identify the transport mechanisms taking place during oxidation? 351.6. Transport equations in the case of thermal oxidation 481.7. Deal and Grove theory of thermal oxidation 531.8. Theory of thermal oxidation under water vapor of silicon 671.9. Kinetics of growth in O2 for oxide films < 30 nm 721.10. Fluctuations of the oxidation constants under experimental conditions 841.11. Conclusion 921.12. Bibliography 92Chapter 2. Ion Implantation 103Jean-Jacques GROB2.1. Introduction 1032.2. Ion implanters 1052.3. Ion range 1112.4. Creation and healing of the defects 1242.5. Applications in traditional technologies and new tendencies 1362.6. Conclusion 1472.7. Bibliography 147Chapter 3. Dopant Diffusion: Modeling and Technological Challenges 155Daniel MATHIOT3.1. Introduction 1553.2. Diffusion in solids 1573.3. Dopant diffusion in single-crystal silicon 1763.4. Examples of associated engineering problems 1913.5. Dopant diffusion in germanium 1963.6. Conclusion 2013.7. Bibliography 201Chapter 4. Epitaxy of Strained Si/Si1-x Gex Heterostructures 209Jean-Michel HARTMANN4.1. Introduction 2094.2. Engineering of the pMOSFET transistor channel using pseudomorphic SiGe layers 2224.3. Engineering of the nMOSFET transistor channel using pseudomorphic Si1-yCy layers; SiGeC diffusion barriers 2334.4. Epitaxy of Si raised sources and drains on ultra-thin SOI substrates 2434.5. Epitaxy of recessed and raised SiGe:B sources and drains on ultra-thin SOI and SON substrates 2484.6. Virtual SiGe substrates: fabrication of sSOI substrates and of dual c-Ge / t-Si channels 2534.7. Thin or thick layers of pure Ge on Si for nano and opto-electronics 2754.8. Devices based on sacrificial layers of SiGe 2924.9. Conclusions and prospects 3114.10. Bibliography 317List of Authors 333Index 335