Silicon Carbide

Dr. Zhe Chuan Feng received his Ph.D. from the University of Pittsburgh. He has worked both within academia and industry on semiconductor growth, process, characterization, semiconductor devices, and lasers. He is currently a Senior Research Scientist at the School of Electrical & Computer Engineering at the Georgia Institute of Technology, focusing on widegap III-Nitrides, SiC and other compound semiconductors. Dr. Jian H. Zhao received his Ph.D. in Electrical Engineering from Carnegie Mellon University in 1988 and joined Rutgers University in the same year. He is Professor and Director of SiCLAB and his research results have been summarized in more than 110 refereed papers and over 140 conference papers and presentations, as well as four book chapters and a book titled Optical Filter Design and Analysis: A Signal Processing Approach. He holds five patents.

• PrefaceChapter 1 Epitaxial growth of high-quality silicon carbide - Fundamentals and recent progress --- T. Kimoto and H. Matsunami* (Kyoto University)(1) Introduction(2) Step-controlled Epitaxy of SiC2.1 Chemical vapor deposition2.2 Step-controlled epitaxy2.3 Surface morphology(3) Growth mechanism of step-controlled epitaxy3.1 Rate-determining process3.2 Off-angle dependence of growth rate 3.3 Temperature dependence of growth rate3.4 Prediction of step-flow growth condition3.4.1 Surface diffusion model3.4.2 Desorption flux3.4.3 Critical supersaturation ratio3.4.4 Critical growth conditions3.4.5 Surface diffusion length3.4.6 Prediction of growth mode(4) Behaviors of steps in SiC epitaxy4.1 Nucleation and step motion4.2 Step bunching(5) Characterization of epitaxial layers5.1 Structural characterization5.2 Optical characterization5.3 Electrical characterization(6) Doping of impurities6.1 Donor doping6.2 Acceptor doping(7) Recent progress7.1 Practical epitaxial growth7.2 Epitaxial growth on (11-20)(8) ConcludionsReferencesChapter 2 Surface characterization of 6H-SiC reconstructions-- Kian-Ping LOH, Eng-Soon TOK, and Andrew T. S. WEE*(National University of Singapore)1. INTRODUCTION2. Sample preparation methods for characterization of surface reconstruction3. Reflection High Energy Electron Diffraction (RHEED)3.1 RHEED system set-up3.2 RHEED analysis of surface reconstruction on 6H-SiC (0001)3.3 6H-SiC (0001)-(1´1) reconstruction3.4 6H-SiC (0001)-(3´3) reconstruction3.5 6H-SiC(0001)-(6×6) reconstruction3.6 6H-SiC(0001)-(Ö3´Ö3R ) reconstruction3.7 1´1 graphite-R on 1´1 SiC3.8 RHEED Rocking beam analysis 4. Scanning Tunneling Microscopy (STM)4.1 Surface Morphological Evolution of 6H-SiC(0001)4.2 6H-SiC (0001)-(3&