SiC Power Module Design

Performance, robustness and reliability

Inbunden, Engelska, 2022

AvAlberto Castellazzi,Alberto Castellazzi,Andrea Irace,Japan) Castellazzi, Alberto (Professor, Kyoto University of Advanced Science,Italy) Irace, Andrea (Professor of Electronics, University of Naples Federico II

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High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging.This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs.Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.

Produktinformation

Utgivningsdatum2022-02-03
Mått156 x 234 x 28 mm
Vikt708 g
FormatInbunden
SpråkEngelska
SerieEnergy Engineering
Antal sidor360
FörlagInstitution of Engineering and Technology
ISBN9781785619076

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Energiteknik inom Naturvetenskap och teknik

Alberto Castellazzi is a professor at the Kyoto University of Advanced Science, Japan. His research focuses on advanced solid-state power processing, including the characterization and use of wide-band-gap semiconductor devices. He has 20 years' experience in power electronics R&D from both industry and academia, including University of Nottingham, UK, SIEMENS (Germany), ETH Zurich (Switzerland), and ALSTOM (France). He is a member of The Power Electronic Conversion Technology Annex (PECTA) of the IEA.Andrea Irace is a professor of electronics at the University of Naples Federico II, Italy. His research focuses on modelling and simulation of WBG devices for power electronics. Prior assignments included the Delft Institute of Microelectronics and Submicron Technology. He has authored more than 120 papers in international publications.

Chapter 1: SiC power MOSFETs and their applicationChapter 2: Anatomy of a multi-chip power moduleChapter 3: Established module design and transfer to SiC technologyChapter 4: Temperature-dependent modeling of SiC power MOSFETs for within- and out-of-SOA simulationsChapter 5: Optimum module design I: electrothermalChapter 6: Optimum module design II: impact of parameter design spreadChapter 7: Optimum module design III: electromagneticChapter 8: Power module lifetime evaluation methodologiesChapter 9: High-temperature capable SiC power modules by Ag sintering on various metal interfacesChapter 10: Advanced die-attach validation technologiesChapter 11: Power module degradation monitoringChapter 12: Advanced thermal management solutionsChapter 13: Emerging packaging concepts and technologies