Hoppa till sidans huvudinnehåll

Del 84

Rapid Thermal Processing

Inbunden, Engelska, 1999

AvA. Slaoui,T. Theiler,J.C. Muller,R.K. Singh,France) Slaoui, A. (CNRS/PHASE, Strasbourg,Germany) Theiler, T. (STEAG-AST, Dornstadt,France) Muller, J.C. (CNRS/PHASE, Strasbourg

1 949 kr

Beställningsvara. Skickas inom 7-10 vardagar. Fri frakt för medlemmar vid köp för minst 249 kr.


Rapid Thermal Processing (RTP) is a well established single-wafer technology in USLI semiconductor manufacturing and electrical engineering, as well as in materials science. The biggest advantage of RTP is that it eliminates the long-ramp-up and ramp-down times associated with furnaces, enabling a significant reduction in the thermal budget. Today, RTP is in production use for source/drain implant annealing, contact alloying, formation of refractory nitrides and silicides and thin gate dielectric (oxide) formation. The aim of Symposium I was to provide an overview of the latest information on research and development in the different topics cited above. The potential applications of RTP in new areas like large area devices such as flat planel displays and solar cells has to be investigated.

About 30 papers were presented in this symposium. The contributions of most interest involved modelling and control, junctions formation and thermal oxidation, deposition and recrystallisation and silicide formations. However, the range of topics and the intent to focus on underlying, fundamental issues like dopant diffusion in silicon from solid sources, strain relaxation and photonic effects, nucleation as well as applications to magnetic films and solar cells devices.

Produktinformation

Hoppa över listan

Du kanske också är intresserad av

Del 80

Thin Film Materials for Large Area Electronics

B. Equer, B. Drevillon, I. French, T. Kallfass, France) Drevillon, B. (Ecole Polytechnique, Laboratoire PICM, Palaiseau, UK) French, I. (Philips Research Laboratory, Redhill, Germany) Kallfass, T. (Institut fur Netzwerk und Systemtheorie, University of Stuttgart

Inbunden

2 339 kr

Del 68

Fullerenes and Carbon Based Materials

P. Delhaes, H. Kuzmany, France,) Delhaes, P. (Centre de Recherche, Paul-Pascal CNRS, Avenue Schweitzer, F-33600 Pessac, Austria.) Kuzmany, H. (Universitat Wien, Institut fur Materialphysik, Strudlhofgasse 4, A-1090 Wien

Inbunden

3 999 kr

Del 61

Group IV Heterostructures, Physics and Devices (Si, Ge, C, Sn)

J.-M. Lourtioz, G. Abstreiter, B. Meyerson, France) Lourtioz, J.-M. (Institut d'Electronique Fondamentale, Universite de Paris-Sud, Orsay Cedex, France) Abstreiter, G. (Institut de Electronique Fondamentale, Universite Paris-Sud, Orsay, USA) Meyerson, B. (IBM TJ Watson Research Center, Yorktown Heights, NY, J. -M Lourtioz

Inbunden

3 409 kr

Del 89

Materials and Processes for Submicron Technologies

J.M. Martinez-Duart, R. Madar, R.A. Levy, Spain) Martinez-Duart, J.M. (Fisica Aplicada, Universidad Cantoblanco, Madrid, France) Madar, R. (LMPG-ENSPG, Saint Martin d'Heres, USA) Levy, R.A. (New Jersey Institute of Technology, Newark, NJ, J. M. Martinez-Duart

Inbunden

1 949 kr

Del 87

Nitrides and Related Wide Band Gap Materials

A. Hangleiter, J.-Y. Duboz, K. Kishino, F.A. Ponce, Germany) Hangleiter, A. (Optoelectronics Group, University of Stuttgart, France) Duboz, J.-Y. (Central Research Laboratory, Thomson-CSF, Orsay, Japan) Kishino, K. (Electrical and Electronics Engineering, Sophia University, Tokyo, USA) Ponce, F.A. (Xerox Parc, Palo Alto. CA

Inbunden

2 629 kr