Principles of Lithography

Inbunden, Engelska, 2019

1 499 kr

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This newest edition of Principles of Lithography reflects the continuing advancement of lithographic technology. In recent years, certain topics, such as line-edge roughness (LER), multi-electron-beam writers, and nonlinear overlay models, have become much more significant to practicing lithographers, and more extensive treatments are therefore provided. EUV lithography is on the threshold for use in high-volume manufacturing, at nodes where a number of complex phenomena are relevant, and the chapter on EUV lithography has been expanded accordingly. New references and homework problems have been added. It is expected that the reader of this book will have a foundation in basic physics and chemistry. No topics will require knowledge of mathematics beyond elementary calculus.

Produktinformation

Utgivningsdatum2019-07-30
Vikt1 420 g
FormatInbunden
SpråkEngelska
SeriePress Monographs
Antal sidor630
Upplaga4
FörlagSPIE Press
ISBN9781510627604

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Chapter 1 Overview of LithographyProblemsChapter 2 Optical Pattern Formation2.1 The Problem of Imaging2.2 Aerial Images2.3 The Contributions of Physics and Chemistry2.4 FocusProblemsReferencesChapter 3 Photoresists3.1 Positive and Negative Resists3.2 Adhesion Promotion3.3 Resist Spin Coating, Softbake, and Hardbake3.4 Photochemistry of Novolak/DNQ g- and i-line Resists3.5 Acid-Catalyzed DUV Resists3.6 Development and Post-Exposure Bakes3.7 Operational Characterization3.8 Line-Edge Roughness3.9 Multilayer Resist ProcessesProblemsReferencesChapter 4 Modeling and Thin-Film Effects4.1 Models of Optical Imaging4.2 Aberrations4.3 Modeling Photochemical Reactions4.4 Thin-Film Optical Effects4.5 Post-Exposure Bakes4.6 Methods for Addressing the Problems of Reflective Substrates4.7 Development4.8 Quantum Effects and Modeling4.9 Summary of ModelingProblemsReferencesChapter 5 Wafer Steppers and Scanners5.1 Overview5.2 Light Sources5.3 Illumination Systems5.4 Reduction Lenses5.5 Autofocus Systems5.6 The Wafer Stage5.7 Scanning5.8 Dual-Stage Exposure Tools5.9 Lithography Exposure Tools before SteppersProblemsReferencesChapter 6 Overlay6.1 Alignment Systems6.1.1 Classification of alignment systems6.1.2 Optical methods for alignment and wafer-to-reticle referencing6.1.3 Number of alignment marks6.2 Overlay Models6.3 Matching6.4 Process-Dependent Overlay EffectsProblemsReferencesChapter 7 Masks and Reticles7.1 Overview7.2 Mask Blanks7.3 Mechanical Optical-Pattern Generators7.4 Electron-Beam Lithography and Single-Beam Mask Writers7.5 Multi-Electron-Beam Mask Writers7.6 Optical Mask Writers7.7 Resists for Mask Making7.8 Etching7.9 Pellicles7.10 Mask-Defect Inspection and RepairProblemsReferencesChapter 8 Confronting the Diffraction Limit8.1 Off-Axis Illumination8.2 Optical Proximity Effects8.3 The Mask-Error Enhancement Factor (MEEF)8.4 Phase-Shifting Masks8.5 Putting It All TogetherProblemsReferencesChapter 9 Metrology9.1 Linewidth Measurement9.1.1 Linewidth measurement using scanning electron microscopes9.1.2 Scatterometry9.1.3 Electrical linewidth measurement9.2 Measurement of OverlayProblemsReferencesChapter 10 Immersion Lithography and the Limits of Optical Lithography10.1 Immersion Lithography10.2 The Diffraction Limit10.3 Improvements in Optics10.4 Maximum Numerical Aperture10.5 The Shortest Wavelength10.6 Improved Photoresists10.7 Flatter Wafers10.8 How Low Can k1 Go?10.9 How Far Can Optical Lithography Be Extended?10.10 Multiple Patterning10.11 Interferometric LithographyProblemsReferencesChapter 11 Lithography Costs11.1 Cost-of-Ownership11.1.1 Capital costs11.1.2 Consumables11.1.3 Mask costs11.1.4 Rework11.1.5 Metrology11.1.6 Maintenance costs11.1.7 Labor costs11.1.8 Facilities costs11.2 Mix-and-Match StrategiesProblemsReferencesChapter 12 Extreme Ultraviolet Lithography12.1 Background and Multilayer Reflectors12.2 EUV Lithography System Overview12.3 EUV Masks12.4 Sources and Illuminators12.5 EUV Optics12.6 EUV ResistsProblemsReferencesChapter 13 Alternative Lithography Techniques13.1 Proximity X-ray Lithography13.2 Electron-Beam Direct-Write Lithography13.2.1 Single-beam direct-write systems13.2.2 Multiple-electron-beam direct-write systems13.2.3 Cell-projection lithography13.2.4 Scattering-mask electron-projection lithography13.3 Ion-Projection Lithography13.4 Imprint Lithography13.5 Directed Self-AssemblyProblemsReferencesAppendix A CoherenceProblemsReferences