Materials for High-Temperature Semiconductor Devices
Häftad, Engelska, 1995
Av National Research Council, Division on Engineering and Physical Sciences, National Materials Advisory Board, Commission on Engineering and Technical Systems, Committee on Materials for High-Temperature Semiconductor Devices
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Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.Table of ContentsFront MatterExecutive SummaryBackgorundState of the Art of Wide Bandgap MaterialsDevice Physics: Behavior at Elevated TemperaturesGeneric Technical Issues Associated with Materials for High-Temperatures...High-Temperature Electronic PackagingDevice Testing for High-Temperature Electronic MaterialsConclusions and RecommendationsReferencesAppendix A: Silicon as a High-Temperature MaterialAppendix B: Gallium Arsenide as a High Temperature MaterialAppendix C: High-Temperature Microwave DevicesAppendix D: Biographical Sketches of Committee Members
Produktinformation
- Utgivningsdatum1995-10-14
- Mått216 x 279 x undefined mm
- FormatHäftad
- SpråkEngelska
- Antal sidor136
- FörlagNational Academies Press
- ISBN9780309053358