LPCVD Silicon Nitride and Oxynitride Films

Material and Applications in Integrated Circuit Technology

Häftad, Engelska, 1991

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This volume reports on ESPRIT Project 369, which concentrated on material obtained by low pressure chemical vapour deposition (LPCVD), and involved measuring and comparing a large number of samples. The papers collected here provide a broad overview of the chemical and physical characteristics of silicon oxynitrides, with special emphasis on the way in which these properties influence the electrical characteristics and behaviour of oxynitrides. The aim of the text is to provide materials scientists and integrated circuit technologists with enough information to consider this class of materials for application in integrated circuit technology.

Produktinformation

Utgivningsdatum1991-05-28
Mått170 x 244 x 10 mm
Vikt309 g
FormatHäftad
SpråkEngelska
SerieResearch Reports Esprit
Antal sidor159
Upplaga1991
FörlagSpringer-Verlag Berlin and Heidelberg GmbH & Co. KG
ISBN9783540539544

Tillhör följande kategorier

1 Characterization of LPCVD Silicon Oxynitride Films.- Abstract.- I. Introduction.- II. Characterization Techniques.- III. Results and Discussion.- IV. Concluding Remark.- 2 Silicon Oxynitride Films: Ion Bombardment Effects, Depth Profiles, and Ionic Polarisation, Studied with the Aid of the Auger Parameter.- Abstract.- 1. Introduction.- 2. Experimental.- 3. Results.- 4. Discussion.- 5. Conclusions.- 3 Oxidation of Low Pressure Chemical Vapour Deposited Silicon Oxynitride Films.- Abstract.- I. Introduction.- II. Experimental.- III. Results.- IV. Discussion.- V. Conclusions.- 4 Electrical Properties of LPCVD Silicon-Oxynitride Layers.- Abstract.- 1. Introduction.- 2. Sample Preparation.- 3. Charge Distribution in the Oxynitride Layer.- 4. Interface Trap Density.- 5. Bulk Properties.- 6. Retention.- 7. Dielectric Integrity.- 8. Conclusions.- 5 On the Correlation between the Electrical and Physico-Chemical Properties of LPCVD Silicon Oxynitride Films.- Abstract.- I. Introduction.- II. Summary of Experimental Results.- III. Discussion.- IV. The Model.- References.- 6 The Use of Oxynitride Layers in Non-volatile S-OxN-OS (Silicon-Oxynitride-Oxide-Silicon) Memory Devices.- Abstract.- 1. Introduction.- 2. Device Fabrication.- 3. Experimental Results and Discussion.- Conclusions.- 7 LPCVD Silicon Oxynitrides for LOCOS Isolation in CMOS Technology.- Abstract.- 1. Introduction.- 2. Experimental.- 3. Results and Discussion.- 4. Application to an Industrial Circuit Demonstrator.- 5. Conclusions.