Future Trends in Microelectronics

Serge Luryi, PhD, is a Distinguished Professor and Chair of Electrical and Computer Engineering at Stony Brook University, as well as the Director of New York State Center for Advanced Technology in Sensor Systems. He has worked in microelectronics for over 30 years, published over 250 papers and has been awarded 53 US patents. He is a Fellow of the IEEE, of the American Physical Society, and of the Optical Society of America.Jimmy Xu, PhD, is the Charles C. Tillinghast Jr. '32 University Professor of Engineering and Physics at Brown University. Prior to 1999, he was the James Ham Chair of Optoelectronics, as well as the Director of the Nortel Institute for Telecommunications at the University of Toronto. He has worked in microelectronics for over 30 years. He is a Fellow of the AAAS, APS, Guggenheim Foundation, IEEE, and the Institute of Physics.Alex Zaslavsky, PhD, is a Professor of Engineering and Physics at Brown University. During 2009-2012 he was a Visiting Senior Chair of Excellence at the Nanosciences Foundation in Grenoble, France. He has worked in microelectronics for over 25 years and has published over 130 journal papers and book chapters. He has been an editor of the Solid State Electronics international journal since 2003.

• List of Contributors xiiiPreface xixS. Luryi, J. M. Xu, and A. ZaslavskyAcknowledgments xxiiiI FUTURE OF DIGITAL SILICON1.1 Prospects of Future Si Technologies in the Data-Driven World 3Kinam Kim and Gitae Jeong1. Introduction 32. Memory – DRAM 43. Memory – NAND 64. Logic technology 85. CMOS image sensors 116. Packaging technology 137. Silicon photonics technology 168. Concluding remarks 18Acknowledgments 18References 181.2 How Lithography Enables Moore’s Law 23J. P. H. Benschop1. Introduction 232. Moore’s Law and the contribution of lithography 233. Lithography technology: past and present 244. Lithography technology: future 265. Summary 316. Conclusion 31Acknowledgments 31References 321.3 What Happened to Post-CMOS? 35P. M. Solomon1. Introduction 352. General constraints on speed and energy 353. Guidelines for success 384. Benchmarking and examples 405. Discussion 466. Conclusion 47Acknowledgments 47References 471.4 Three-Dimensional Integration of Ge and Two-Dimensional Materials for One-Dimensional Devices 51M. Östling, E. Dentoni Litta, and P.-E. Hellström1. Introduction 512. FEOL technology and materials for 3D integration 543. Integration of “more than Moore” functionality 574. Implications of 3D integration at the system level 595. Conclusion 61Acknowledgments 62References 631.5 Challenges to Ultralow-Power Semiconductor Device Operation 69Francis Balestra1. Introduction 692. Ultimate MOS transistors 703. Small slope switches 764. Conclusion 77Acknowledgments 78References 781.6 A Universal Nonvolatile Processing Environment 83T. Windbacher, A. Makarov, V. Sverdlov, and S. Selberherr1. Introduction 832. Universal nonvolatile processing environment 843. Bias-field-free spin-torque oscillator 874. Summary 90Acknowledgments 90References 901.7 Can MRAM (Finally) Be a Factor? 93Jean-Pierre Nozières1. Introduction 932. What is MRAM? 933. Current limitations for stand-alone memories 964. Immediate opportunities: embedded memories 985. Conclusion 101References 1011.8 Nanomanufacturing for Electronics or Optoelectronics 103M. J. Kelly1. Introduction 1032. Nano-LEGO® 1043. Tunnel devices 1054. Split-gate transistors 1065. Other nanoscale systems 1086. Conclusion 108Acknowledgments 109References 109II NEW MATERIALS AND NEW PHYSICS2.1 Surface Waves Everywhere 113M. I. Dyakonov1. Introduction 1132. Water waves 1133. Surface acoustic waves 1164. Surface plasma waves and polaritons 1175. Plasma waves in two-dimensional structures 1176. Electronic surface states in solids 1197. Dyakonov surface waves (DSWs) 121References 1232.2 Graphene and Atom-Thick 2D Materials: Device Application Prospects 127Sungwoo Hwang, Jinseong Heo, Min-Hyun Lee, Kyung-Eun Byun, Yeonchoo Cho, and Seongjun Park1. Introduction 1272. Conventional low-dimensional systems 1273. New atomically thin material systems 1294. Device application of new material systems 1335. Components in Si technology 1376. Graphene on Ge 1427. Conclusion 142References 1422.3 Computing with Coupled Relaxation Oscillators 147N. Shukla, S. Datta, A. Parihar, and A. Raychowdhury1. Introduction 1472. Vanadium dioxide-based relaxation oscillators 1483. Experimental demonstration of pairwise coupled HVFET oscillators 1504. Computing with pairwise coupled HVFET oscillators 1505. Associative computing using pairwise coupled oscillators 1536. Conclusion 155References 1562.4 On the Field-Induced Insulator–Metal Transition in VO2 Films 157Serge Luryi and Boris Spivak1. Introduction 1572. Electron concentration-induced transition 1593. Field-induced transition in a film 1614. Need for a ground plane 1635. Conclusion 163References 1642.5 Group IV Alloys for Advanced Nano- and Optoelectronic Applications 167Detlev Grützmacher1. Introduction 1672. Epitaxial growth of GeSn layers by reactive gas source epitaxy 1683. Optically pumped GeSn laser 1724. Potential of GeSn alloys for electronic devices 1755. Conclusion 178Acknowledgments 178References 1782.6 High Sn-Content GeSn Light Emitters for Silicon Photonics 181D. Stange, C. Schulte-Braucks, N. von den Driesch, S. Wirths, G. Mussler, S. Lenk, T. Stoica, S. Mantl, D. Grützmacher, D. Buca, R. Geiger, T. Zabel, H. Sigg, J. M. Hartmann, and Z. Ikonic1. Introduction 1812. Experimental details of the GeSn material system 1833. Direct bandgap GeSn light emitting diodes 1854. Group IV GeSn microdisk laser on Si(100) 1885. Conclusion and outlook 191References 1912.7 Gallium Nitride-Based Lateral and Vertical Nanowire Devices 195Y.-W. Jo, D.-H. Son, K.-S. Im, and J.-H. Lee1. Introduction 1952. Crystallographic study of GaN nanowires using TMAH wet etching 1963. Ω-shaped-gate lateral AlGaN/GaN FETs 1994. Gate-all-around vertical GaN FETs 2005. Conclusion 203Acknowledgments 204References 2042.8 Scribing Graphene Circuits 207N. Rodriguez, R. J. Ruiz, C. Marquez, and F. Gamiz1. Introduction 2072. Graphene oxide from graphite 2083. GO exfoliation 2094. Selective reduction of graphene oxide 2105. Raman spectroscopy 2116. Electrical properties of graphene oxide and reduced graphene oxide 2127. Future perspectives 214Acknowledgments 215References 2152.9 Structure and Electron Transport in Irradiated Monolayer Graphene 217I. Shlimak, A.V. Butenko, E. Zion, V. Richter, Yu. Kaganovskii, L. Wolfson, A. Sharoni, A. Haran, D. Naveh, E. Kogan, and M. Kaveh1. Introduction 2172. Samples 2173. Raman scattering (RS) spectra 2184. Sample resistance 2205. Hopping magnetoresistance 225References 2292.10 Interplay of Coulomb Blockade and Luttinger-Liquid Physics in Disordered 1D InAs Nanowires with Strong Spin–Orbit Coupling 233R. Hevroni, V. Shelukhin, M. Karpovski, M. Goldstein, E. Sela, A. Palevski, and Hadas Shtrikman1. Introduction 2332. Sample preparation and the experimental setup 2343. Experimental results 2344. Conclusion 240Acknowledgments 240References 240III MICROELECTRONICS IN HEALTH, ENERGY HARVESTING, AND COMMUNICATIONS3.1 Image-Guided Intervention and Therapy: The First Time Right 245B. H. W. Hendriks, D. Mioni, W. Crooijmans, and H. van Houten1. Introduction 2452. Societal challenge: Rapid rise of cardiovascular diseases 2463. Societal challenge: Rapid rise of cancer 2524. Drivers of change in healthcare 2565. Conclusion 257Acknowledgments 257References 2573.2 Rewiring the Nervous System, Without Wires 259D. A. Borton1. Introduction 2592. Why go wireless? 2603. One wireless recording solution used to explore primary motor cortex control of locomotion 2624. Writing into the nervous system with epidural electrical stimulation of spinal circuits effectively modulates gait 2655. Genetic technology brings a better model to neuroscience 2676. The wireless bridge for closed-loop control and rehabilitation 2687. Conclusion 269Acknowledgments 270References 2703.3 Nanopower-Integrated Electronics for Energy Harvesting, Conversion, and Management 275A. Romani, M. Dini, M. Filippi, M. Tartagni, and E. Sangiorgi1. Introduction 2752. Commercial ICs for micropower harvesting 2763. State-of-the-art integrated nanocurrent power converters for energy-harvesting applications 2784. A multisource-integrated energy-harvesting circuit 2815. Conclusion 286Acknowledgments 286References 2863.4 Will Composite Nanomaterials Replace Piezoelectric Thin Films for Energy Transduction Applications? 291R. Tao, G. Ardila, R. Hinchet, A. Michard, L. Montès, and M. Mouis1. Introduction 2912. Thin film piezoelectric materials and applications 2923. Individual ZnO and GaN piezoelectric nanowires: experiments and simulations 2934. Piezoelectric composite materials using nanowires 2955. Conclusion 303Acknowledgments 304References 3043.5 New Generation of Vertical-Cavity Surface-Emitting Lasers for Optical Interconnects 309N. Ledentsov Jr, V. A. Shchukin, N. N. Ledentsov, J.-R. Kropp, S. Burger, and F. Schmidt1. Introduction 3092. VCSEL requirements 3103. Optical leakage 3124. Experiment 3135. Simulation 3166. Conclusion 323Acknowledgments 323References 3233.6 Reconfigurable Infrared Photodetector Based on Asymmetrically Doped Double Quantum Wells for Multicolor and Remote Temperature Sensing 327X. Zhang, V. Mitin, G. Thomain, T. Yore, Y. Li, J. K. Choi, K. Sablon, and A. Sergeev1. Introduction 3272. Fabrication of DQWIP with asymmetrical doping 3283. Optoelectronic characterization of DQWIPs 3294. Temperature sensing 3335. Conclusion 334Acknowledgments 335References 3353.7 Tunable Photonic Molecules for Spectral Engineering in Dense Photonic Integration 337M. C. M. M. Souza, G. F. M. Rezende, A. A. G. von Zuben, G. S. Wiederhecker, N. C. Frateschi, and L. A. M. Barea1. Introduction 3372. Photonic molecules and their spectral features 3383. Coupling-controlled mode-splitting: GHz-operation on a tight footprint 3404. Reconfigurable spectral control 3415. Toward reconfigurable mode-splitting control 3436. Conclusion 346Acknowledgments 346References 347INDEX 349