Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications 1
bokomslag Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
Vetenskap & teknik

Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

Byung-Eun Park • Hiroshi Ishiwara

Inbunden

3179:-

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  • 347 sidor
  • Författare: Byung-Eun Park, Hiroshi Ishiwara
  • Format: Inbunden
  • ISBN: 9789402408393
  • Språk: Engelska
  • Antal sidor: 347
  • Förlag: Springer

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