Ferroelectric Dielectrics Integrated on Silicon

Emmanuel Defaÿ has been involved at CEA LETI Minatec in piezoelectric and High-K dielectrics for 15 years. He has published 70 scientific papers, one book on piezoelectrics and worked with several top level microelectronics manufacturers (IBM, Freescale, ST). He is currently a lecturer at Ecole Centrale Paris and By-Fellow of Churchill College, Cambridge University, UK.

• Chapter 1. The Thermodynamic Approach 1Emmanuel DEFAŸ1.1. Background 11.2. The functions of state 21.3. Linear equations, piezoelectricity 61.4. Nonlinear equations, electrostriction 81.5. Thermodynamic modeling of the ferroelectric–paraelectric phase transition 91.6. Conclusion 241.7. Bibliography 25Chapter 2. Stress Effect on Thin Films 27Pierre-Eymeric JANOLIN2.1. Introduction 272.2. Modeling the system under consideration 272.3. Temperature–misfit strain phase diagrams for monodomain films 282.4. Domain stability map 352.5. Temperature–misfit strain phase diagram for polydomain films 482.6. Discussion of the nature of the “misfit strain” 502.7. Conclusion 522.8. Experimental validation of phase diagrams: state of the art 522.9. Case study 532.10. Results 532.11. Comparison between the experimental data and the temperature–misfit strain phase diagrams 602.12. Conclusion 652.13. Bibliography 66Chapter 3. Deposition and Patterning Technologies 71Chrystel DEGUET, Gwenaël LE RHUN, Bertrand VILQUIN and Emmanuel DEFAŸ3.1. Deposition method 713.2. Etching 863.3. Contamination 863.4. Monocrystalline thin-film transfer 873.5. Design of experiments 963.6. Conclusion 1073.7. Bibliography 108Chapter 4. Analysis Through X-ray Diffraction of Polycrystalline Thin Films 111Patrice GERGAUD4.1. Introduction 1114.2. Some reminders of x-ray diffraction and crystallography 1124.3. Application to powder or polycrystalline thin-films 1224.4. Phase analysis by X-ray diffraction 1264.5. Identification of coherent domain sizes of diffraction and micro-strains 1324.6. Identification of crystallographic textures by X-ray diffraction 1394.7. Determination of strains/stresses by X-ray diffraction 1464.8. Bibliography 156Chapter 5. Physicochemical and Electrical Characterization 159Gwenaël LE RHUN, Brahim DKHIL and Pascale GEMEINER5.1. Introduction 1595.2. Useful characterization techniques 1595.3. Ferroelectric measurement 1705.4. Dielectric measurement 1775.5. Bibliography 180Chapter 6. Radio-Frequency Characterization 183Thierry LACREVAZ6.1. Introduction 1836.2. Notions and basic concepts associated with HF 1846.3. Frequency analysis: HF characterization of materials 2046.4. Bibliography 211Chapter 7. Leakage Currents in PZT Capacitors 213Emilien BOUYSSOU7.1. Introduction 2137.2. Leakage current in metal/insulator/metal structures 2157.3. Problem of leakage current measurement 2257.4. Characterization of the relaxation current 2337.5. Literature review of true leakage current in PZT 2377.6. Dynamic characterization of true leakage current: I(t, T) 2397.7. Static characterization of the true leakage current: I(V,T) 2637.8. Conclusion 2737.9. Bibliography 275Chapter 8. Integrated Capacitors 281Emmanuel DEFAŸ8.1. Introduction 2818.2. Potentiality of perovskites for RF devices: permittivity and losses 2838.3. Bi-dielectric capacitors with high linearity 2948.4. STO capacitors integrated on CMOS substrate by AIC technology 2988.5. Bibliography 303Chapter 9. Reliability of PZT Capacitors 305Emilien BOUYSSOU9.1. Introduction 3059.2. Accelerated aging of metal/insulator/metal structures 3079.3. Accelerated aging of PZT capacitors through CVS tests 3169.4. Lifetime extrapolation of PZT capacitors 3259.5. Conclusion 3359.6. Bibliography 336Chapter 10. Ferroelectric Tunable Capacitors 341Benoit GUIGUES10.1. Introduction 34110.2. Overview of the tunable capacitors 34210.3. Types of actual tunable capacitors 35510.4. Toward new tunable capacitors 36610.5. Bibliography 375Chapter 11. FRAM Ferroelectric Memories: Basic Operations, Limitations, Innovations and Applications 379Christophe MULLER11.1. Taxonomy of non-volatile memories 37911.2. FRAM memories: basic operations and limitations 38311.3. Technologies available in 2011 38711.4. Technological innovations 38811.5. Some application areas of FRAM technology 39411.6. Conclusion 39611.7. Bibliography 397Chapter 12. Integration of Multiferroic BiFeO3 Thin Films into Modern Microelectronics 403Xiaohong ZHU12.1. Introduction 40312.2. Preparation methods 40712.3. Ferroelectricity and magnetism 41612.4. Device applications 42712.5. Bibliography 436List of Authors 443Index 445