Kalyan Biswas, PhD, is an Assistant Professor in the ECE Department at MCKV Institute of Engineering in Liluah, Howrah, WB, India. Angsuman Sarkar, PhD, is a Professor in the ECE Department of the Kalyani Government Engineering College in Kalyani, Nadia, WB, India. He is a co-editor of the Wiley title Optical Switching: Device Technology and Applications in Networks (2022).

• About the Editors xiList of Contributors xiiiPreface xviiAcknowledgments xix1 Emerging MOSFET Technologies 1Kalyan Biswas and Angsuman Sarkar1.1 Introduction: Transistor Action 11.2 MOSFET Scaling 11.3 Challenges in Scaling the MOSFET 21.4 Emerging MOSFET Architectures 31.4.5 Graphene FET 71.4.6 III-V Material-based MOSFETS 71.4.7 HEMT 81.4.8 Strain Engineered MOSFETs 81.5 Organization of this Book 92 MOSFET: Device Physics and Operation 15Ruthramurthy Balachandran, Savitesh M. Sharma, and Avtar Singh2.1 Introduction to MOSFET 152.2 Advantages of MOSFET 162.3 Applications of MOSFETs 162.4 Types of MOSFETs 172.5 Band Diagram of MOSFET 192.6 MOSFET Regions of Operation 222.7 Scaling of MOSFET 252.8 Short-channel Effects 272.9 Body Bias Effect 312.10 Advancement of MOSFET Structures 333 High-K Dielectrics in Next Generation VLSI/Mixed Signal Circuits 47Asutosh Srivastava3.1 Introduction to Gate Dielectrics 473.2 High-K Dielectrics in Metal-Oxide-Semiconductor Capacitors 493.3 High-K Dielectrics in Metal Insulator Metal (MIM) Capacitors 503.4 MOSFETs Scaling and the Need of High-K 523.5 High-K Dielectrics in Next Generation Transistors 534 Consequential Effects of Trap Charges on Dielectric Defects for MU-G FET 61Annada S. Lenka and Prasanna K. Sahu4.1 Introduction 614.2 TID Effects Overview 634.3 Application Area of Device for TID Effect Analysis 644.4 Near the Earth: Trapped Radiation 664.5 Ionizing Radiation Effect in Silicon Dioxide (SiO2) 684.6 TID Effects in CMOS 704.7 TID Effects in Bipolar Devices 704.8 Understanding and Modeling a-SiO2 Physics 764.9 Hydrogen (H2) Reaction with Trapped Charges at Insulator 784.10 Pre-Existing Trap Density and their Respective Location 784.11 Use of High-K Dielectric in MU-G FET 794.12 Properties of Trap in the High-K with Interfacial Layer 804.13 Trap Extraction Techniques 814.14 Conclusion 815 Strain Engineering for Highly Scaled MOSFETs 85Chinmay K. Maiti, Taraprasanna Dash, Jhansirani Jena, and Eleena Mohapatra5.1 Introduction 855.2 Simulation Approach 885.3 Case Study 925.4 Conclusions 1096 TCAD Analysis of Linearity Performance on Modified Ferroelectric Layer in FET Device with Spacer 113Yash Pathak, Kajal Verma, Bansi Dhar Malhotra, and Rishu Chaujar6.1 Introduction 1136.2 Simulation and Structure of Device 1146.3 Results and Analysis 1156.4 Conclusion 1207 Electrically Doped Nano Devices: A First Principle Paradigm 125Debarati D. Roy, Pradipta Roy, and Debashis De7.1 Introduction 1257.2 Electrical Doping 1287.3 First Principle 1307.4 Molecular Simulation 1367.5 Conclusion 1378 Tunnel FET: Principles and Operations 143Zahra Ahangari8.1 Introduction to Quantum Mechanics and Principles of Tunneling 1438.2 Tunnel Field-Effect Transistor 1458.3 Challenges of Tunnel Field-Effect Transistor 1488.4 Techniques for Improving Electrical Performance of Tunnel Field-Effect Transistor 1518.5 Conclusion 1699 GaN Devices for Optoelectronics Applications 175Nagarajan Mohankumar and Girish S. Mishra9.1 Introduction 1759.2 Properties of GaN-Based Material 1769.3 GaN LEDs 1829.4 GaN Lasers 1879.5 GaN HEMTs for Optoelectronics 1899.6 GaN Sensors 19110 First Principles Theoretical Design on Graphene-Based Field-Effect Transistors 201Yoshitaka Fujimoto10.1 Introduction 20110.2 Graphene 20210.3 Graphene/h-BN Hybrid Structure 20610.4 Conclusions 21711 Performance Analysis of Nanosheet Transistors for Analog ICs 221Yogendra P. Pundir, Arvind Bisht, and Pankaj K. Pal11.1 Introduction 22111.2 Evolution of Nanosheet Transistors 22211.3 TCAD Modeling of Nanosheet Transistor 23011.4 Transistor’s Analog Performance Parameters 23411.5 Challenges and Perspectives of Modern Analog Design 23912 Low-Power Analog Amplifier Design using MOS Transistor in the Weak Inversion Mode 255Soumya Pandit and Koyel Mukherjee12.1 Introduction 25512.2 Review of the Theory ofWeak Inversion Mode Operation of MOS Transistor 25612.3 Design Steps for Transistor Sizing Using the IC 26612.4 Design Examples 26712.5 Summary 27913 Ultra-conductive Junctionless Tunnel Field-effect Transistor-based Biosensor with Negative Capacitance 281Palasri Dhar, Soumik Poddar, and Sunipa Roy13.1 Introduction 28113.2 Importance of SS and ION/IOFF in Biosensing 28413.3 Importance of Dopingless Source and Drain in High Conductivity 28713.4 Relation of Negative Capacitance with Non-hysteresis and Effect on Biosensing 28913.5 Variation of Source Material on Biosensing 29013.6 Importance of Dual Gate and Ferroelectricity on Biosensing 29113.7 Effect of Dual Material Gate on Biosensing 29614 Conclusion and Future Perspectives 301Kalyan Biswas and Angsuman Sarkar14.1 Applications 30114.2 Some Recent Developments 30314.3 Future Perspectives 30614.4 Conclusion 307References 308Index 311