Materials Fundamentals of Gate Dielectrics

Inbunden, Engelska, 2005

AvAlexander A. Demkov,Alexandra Navrotsky

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Materials Fundamentals of Dielectric Gates treats materials fundamentals of the novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of the CMOS devices. This is a very fast evolving field of research so the focus is materials, mostly transition metal oxide, that determine performance in device applications. The complexity of the structure-property relations in TM oxides makes the use of the state-of-the-art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-rayphotoelectron spectroscopy. Since many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs, a comprehensive review of recent developments in this field is thus also given

Produktinformation

Utgivningsdatum2005-07-14
Mått155 x 235 x 27 mm
Vikt852 g
FormatInbunden
SpråkEngelska
Antal sidor476
Upplaga2005
FörlagSpringer-Verlag New York Inc.
ISBN9781402030772

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Alexander Demkov received his Ph.D. in Physics at Arizona State University in 1995 secializing in electronic structure theory. His postdoctoral research was focused on electronic properties of zeolites. Het joined Motorola R&D in 1997, and has been working on materials problems of advanced CMOS gate stack, and quantum transport. He has authored over 60 papers, and has two issued patents. He has organized several national and international meetings, serves as an associate editor ofg the Journal of Vacuum Science and Technology, and is a member of the ITRS working group on Emerging Research Materials. He is adjunct professor of Physics at Arizona State University. Alexandra Navrotsky was educated at the Bronx High School of Science and the University of Chicago (B.S., M.S., and Ph.D. in physical chemistry). After postdoctoral work in Germany and at Penn State University, she joined the faculty in Chemistry at Arizona State University, where she remained till her move to the Department of Geological and Geophysical Sciences at Princeton University in 1985. She chaired that department from 1988 to 1991 and has been active in the Princeton Materials Institute. On July 1, 1997, she became an interdisciplinary professor of Ceramic, Earth and Environmental Materials Chemistry at the University of California at Davis and is now Edward Roessler Chair in Mathematical and Physical Sciences. She directs the NEAT (Nanomaterials in the Environment, Agriculture and Technology) activities at Davis, including a faculty hiring initiative, an NSF-IGERT, and a new Organized Research Unit.

Materials and Physical Properties of High-K Oxide Films.- Device Principles of High-K Dielectrics.- Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics.- Electronic Structure and Chemical Bonding in High-k Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces.- Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides.- Dielectric Properties of Simple and Complex Oxides from First Principles.- IVb Transition Metal Oxides and Silicates: An Ab Initio Study.- The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors.- Interfacial Properties of Epitaxial Oxide/Semiconductor Systems.- Functional Structures.- Mechanistic Studies of Dielectric Growth on Silicon.- Methodology for Development of High-? Stacked Gate Dielectrics on III–V Semiconductors.