The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community.High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.
Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium
IntroductionThe need for high-k gate dielectrics and materials requirementDeposition techniquesALCVD, MOCVD, PLD, MBECharacterizationPhysico-chemical characterizationX-ray and electron spectroscopiesOxygen diffusion and thermal stabilityDefect characterization by ESRBand alignment determined by photo-injectionElectrical characteristicsTheory of defects in high-k materialsBonding constraints and defect formation at Si/high-k interfacesBand alignment calculationsElectron mobility at the Si/high-k interfaceModel for defect generation during electrical stressTechnological aspectsDevice integration issuesDevice concepts for sub-100 nm CMOS technologiesTransistor characteristicsNonvolatile memories based on high-k ferroelectric layers