Electronic Packaging Science and Technology

King-Ning Tu, PhD, is TSMC Chair Professor at the National Chiao Tung University in Taiwan. He received his doctorate in Applied Physics from Harvard University in 1968.Chih Chen, PhD, is Chairman and Distinguished Professor in the Department of Materials Science and Engineering at National Yang Ming Chiao Tung University in Taiwan. He received his doctorate in Materials Science from the University of California at Los Angeles in 1999. Hung-Ming Chen, PhD, is Professor in the Institute of Electronics at National Yang Ming Chiao Tung University in Taiwan. He received his doctorate in Computer Sciences from the University of Texas at Austin in 2003.

• Preface xi1 Introduction 11.1 Introduction 11.2 Impact of Moore’s Law on Si Technology 31.3 5G Technology and AI Applications 41.4 3D IC Packaging Technology 71.5 Reliability Science and Engineering 111.6 The Future of Electronic Packaging Technology 131.7 Outline of the Book 14References 15Part I 172 Cu-to-Cu and Other Bonding Technologies in Electronic Packaging 192.1 Introduction 192.2 Wire Bonding 202.3 Tape-Automated Bonding 232.4 Flip-Chip Solder Joint Bonding 262.5 Micro-Bump Bonding 322.6 Cu-to-Cu Direct Bonding 352.6.1 Critical Factors for Cu-to-Cu Bonding 362.6.2 Analysis of Cu-to-Cu Bonding Mechanism 392.6.3 Microstructures at the Cu-to-Cu Bonding Interface 462.7 Hybrid Bonding 512.8 Reliability – Electromigration and Temperature Cycling Tests 54Problems 56References 573 Randomly-Oriented and (111) Uni-directionally-Oriented Nanotwin Copper 613.1 Introduction 613.2 Formation Mechanism of Nanotwin Cu 633.3 In Situ Measurement of Stress Evolution During Nanotwin Deposition 673.4 Electrodeposition of Randomly Oriented Nanotwinned Copper 693.5 Formation of Unidirectionally (111)-oriented Nanotwin Copper 713.6 Grain Growth in [111]-Oriented nt-Cu 753.7 Uni-directional Growth of η-Cu 6 Sn 5 in Microbumps on (111) Oriented nt-Cu 773.8 Low Thermal-Budget Cu-to-Cu Bonding Using [111]-Oriented nt-Cu 783.9 Nanotwin Cu RDL for Fanout Package and 3D IC Integration 83Problems 86References 874 Solid–Liquid Interfacial Diffusion Reaction (SLID) Between Copper and Solder 914.1 Introduction 914.2 Kinetics of Scallop-Type IMC Growth in SLID 934.3 A Simple Model for the Growth of Mono-Size Hemispheres 954.4 Theory of Flux-Driven Ripening 974.5 Measurement of the Nano-channel Width Between Two Scallops 1004.6 Extremely Rapid Grain Growth in Scallop-Type Cu6Sn5 in Slid 100Problems 102References 1035 Solid-State Reactions Between Copper and Solder 1055.1 Introduction 1055.2 Layer-Type Growth of IMC in Solid-State Reactions 1065.3 Wagner Diffusivity 1115.4 Kirkendall Void Formation in Cu 3 Sn 1135.5 Sidewall Reaction to Form Porous Cu 3 Sn in μ-Bumps 1145.6 Effect of Surface Diffusion on IMC Formation in Pillar-Typeμ-Bumps 120Problems 124References 125Part II 1276 Essence of Integrated Circuits and Packaging Design 1296.1 Introduction 1296.2 Transistor and Interconnect Scaling 1316.3 Circuit Design and LSI 1336.4 System-on-Chip (SoC) and Multicore Architectures 1396.5 System-in-Package (SiP) and Package Technology Evolution 1406.6 3D IC Integration and 3D Silicon Integration 1446.7 Heterogeneous Integration: An Introduction 145Problems 146References 1467 Performance, Power, Thermal, and Reliability 1497.1 Introduction 1497.2 Field-Effect Transistor and Memory Basics 1517.3 Performance: A Race in Early IC Design 1557.4 Trend in Low Power 1577.5 Trade-off between Performance and Power 1597.6 Power Delivery and Clock Distribution Networks 1607.7 Low-Power Design Architectures 1637.8 Thermal Problems in IC and Package 1667.9 Signal Integrity and Power Integrity (SI/PI) 1687.10 Robustness: Reliability and Variability 169Problems 171References 1728 2.5D/3D System-in-Packaging Integration 1738.1 Introduction 1738.2 2.5D IC: Redistribution Layer (RDL) and TSV-Interposer 1748.3 2.5D IC: Silicon, Glass, and Organic Substrates 1768.4 2.5D IC: HBM on Silicon Interposer 1778.5 3D IC: Memory Bandwidth Challenge for High-Performance Computing 1788.6 3D IC: Electrical and Thermal TSVs 1808.7 3D IC: 3D-Stacked Memory and Integrated Memory Controller 1828.8 Innovative Packaging for Modern Chips/Chiplets 1838.9 Power Distribution for 3D IC Integration 1868.10 Challenge and Trend 187Problems 188References 188Part III 1919 Irreversible Processes in Electronic Packaging Technology 1939.1 Introduction 1939.2 Flow in Open Systems 1969.3 Entropy Production 1989.3.1 Electrical Conduction 1999.3.1.1 Joule Heating 2019.3.2 Atomic Diffusion 2039.3.3 Heat Conduction 2039.3.4 Conjugate Forces When Temperature Is a Variable 2059.4 Cross-Effects in Irreversible Processes 2069.5 Cross-Effect Between Atomic Diffusion and Electrical Conduction 2079.5.1 Electromigration and Stress-Migration in Al Strips 2099.6 Irreversible Processes in Thermomigration 2119.6.1 Thermomigration in Unpowered Composite Solder Joints 2129.7 Cross-Effect Between Heat Conduction and Electrical Conduction 2159.7.1 Seebeck Effect 2169.7.2 Peltier Effect 218Problems 219References 21910 Electromigration 22110.1 Introduction 22110.2 To Compare the Parameters in Atomic Diffusion and Electric Conduction 22210.3 Basic of Electromigration 22410.3.1 Electron Wind Force 22510.3.2 Calculation of the Effective Charge Number 22710.3.3 Atomic Flux Divergence Induced Electromigration Damage 22810.3.4 Back Stress in Electromigration 23010.4 Current Crowding and Electromigration in 3-Dimensional Circuits 23110.4.1 Void Formation in the Low Current Density Region 23410.4.2 Current Density Gradient Force in Electromigration 23810.4.3 Current Crowding Induced Pancake-Type Void Formation in Flip-Chip Solder Joints 24210.5 Joule Heating and Heat Dissipation 24310.5.1 Joule Heating and Electromigration 24410.5.2 Joule Heating on Mean-Time-to-Failure in Electromigration 245Problems 245References 24611 Thermomigration 24911.1 Introduction 24911.2 Driving Force of Thermomigration 24911.3 Analysis of Heat of Transport, Q* 25011.4 Thermomigration Due to Heat Transfer Between Neighboring Pairs of Poweredand Unpowered Solder Joints 253Problems 255References 25512 Stress-Migration 25712.1 Introduction 25712.2 Chemical Potential in a Stressed Solid 25812.3 Stoney’s Equation of Biaxial Stress in Thin Films 26012.4 Diffusional Creep 26412.5 Spontaneous Sn Whisker Growth at Room Temperature 26712.5.1 Morphology 26712.5.2 Measurement of the Driving Force to Grow a Sn Whisker 27112.5.3 Kinetics of Sn Whisker Growth 27212.5.4 Electromigration-Induced Sn Whisker Growth in Solder Joints 27512.6 Comparison of Driving Forces Among Electromigration, Thermomigration, and Stress-Migration 27712.6.1 Products of Force 278Problems 279References 28013 Failure Analysis 28113.1 Introduction 28113.2 Microstructure Change with or Without Lattice Shift 28513.3 Statistical Analysis of Failure 28713.3.1 Black’s Equation of MTTF for Electromigration 28713.3.2 Weibull Distribution Function and JMA Theory of Phase Transformations 28913.4 A Unified Model of MTTF for Electromigration, Thermomigration, and Stress-Migration 29013.4.1 Revisit Black’s Equation of MTTF for Electromigration 29013.4.2 MTTF for Thermomigration 29213.4.3 MTTF for Stress-Migration 29213.4.4 The Link Among MTTF for Electromigration, Thermomigration, and Stress-Migration 29313.4.5 MTTF Equations for Other Irreversible Processes in Open Systems 29313.5 Failure Analysis in Mobile Technology 29313.5.1 Joule Heating Enhanced Electromigration Failure of Weak-Link in 2.5D IC Technology 29413.5.2 Joule Heating Induced Thermomigration Failure Due to Thermal Crosstalk in 2.5D IC Technology 298Problems 301References 30214 Artificial Intelligence in Electronic Packaging Reliability 30314.1 Introduction 30314.2 To Change Time-Dependent Event to Time-Independent Event 30414.3 To Deduce MTTF from Mean Microstructure Change to Failure 30514.4 Summary 306Index 307