Strained Silicon Heterostructures

Dr Maiti received his M Tech degree in Radio Physics and Electronics from the University of Calcutta and MSc from the University of Technology, Loughborough. His PhD was awarded by the Indian Institute of Technology, Kharagpur in 1984 where he remained and currently is a Professor in the Department of Electronics. He currently leads the semiconductor device/process simulation research group.Dr Chakrabarti received his MSc(Tech) degree in Applied Physics and DSc from the University of Calcutta in 1974. He is now associated with the VLSI laboratory of the Indian Institute of Technology, Kharagpur after retiring as a Professor in the Department of Electronics.Dr Ray received his MSc degree from the University of Calcutta and his M Tech and PhD from the Indian Institute of Technology, Kharagpur in 1991. He is now an Associate Professor in the Physics department leading the semiconductor materials processing research group.

• Chapter 1: IntroductionChapter 2: Strained Layer EpitaxyChapter 3: Electronic Properties of Alloy LayersChapter 4: Gate Dielectrics on Strained LayersChapter 5: SiGe Heterojunction Bipolar TransistorsChapter 6: Heterostructure Field Effect TransistorsChapter 7: BICFET, RTD and Other DevicesChapter 8: MODFETsChapter 9: Contact Metallization on Strained LayersChapter 10: Si/SiGe Optoelectronics