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Indium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties; selected InGAs and InGaAsP properties; defects and their detection; surfaces; interfaces; oxidation; etching; ion implantation; and exploitation in devices.
- Format: Häftad
- ISBN: 9780863416422
- Språk: Engelska
- Antal sidor: 520
- Utgivningsdatum: 1990-12-01
- Förlag: Institution of Engineering & Technology