Phase Transition Electronics

Principles of Next-Generation Devices

Inbunden, Engelska, 2027

AvMuhammad Ashraful Alam,Nicolo Zagni

1 759 kr

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Produktinformation

Utgivningsdatum2027-01-18
FormatInbunden
SpråkEngelska
Antal sidor176
FörlagJohn Wiley & Sons Inc
ISBN9781394319114

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I Introduction to Theory of Phase Transition 91 Demystifying Phase Transition 131.1 Introduction: The mystery of phase transition 131.2 Buckling of a slender beam captures the essence of phase transition 141.3 Snap transition of an pre-buckled stick 191.4 A few observations about phase transition 251.5 Minimum Energy, Maximum Flow, and Maximum Entropy Principles 271.6 Conclusions 282 Phase Transition in NEMS 312.1 Introduction: MEMS/NEMS phase transition 312.2 Equilibrium Phase transition of MEMS/NEMS 322.3 Negative capacitance and spring softening 392.4 Phase transition and hysteretic response 422.5 Dynamics of electro-mechanical switches: Unsteady phase transition 462.6 Conclusions 503 Electronic Phase Transition in Ferroelectrics 533.1 Introduction: What is a ferroelectric material 533.2 A simple model for ferroelectric capacitors 543.3 Landau Theory of Phase Transition 583.4 Conclusions 634 Material Phase Transition by van der Waals Theory 654.1 Phase transition in Homogeneous systems 654.2 vdW equation in terms of critical vc, pc, Tc 684.3 Implications of scaled vdW equation 714.4 Energy functions of vdW equation 734.5 Conclusions 755 Phase-Field Theory Describes Semiconductor Memories 775.1 The need for a phase-field theory 785.2 Phase-Field model generalizes Landau Theory 785.3 Approximate solution of the phase field model 805.4 Conclusions 84II Phase Transition in Transistors 876 Voltage-Driven Phase Transition in Logic Transistors 936.1 Phenomenological theory of NCFETs 946.2 NCFET Design by FE negative capacitance 966.3 Hysteresis as a by-product of AV maximization 1016.4 ZSubFET for Hysteresis-free abrupt switching 1036.5 Physics-based Circuit Model for NCFET 1076.6 Features of NCFET I-V Characteristics 1086.7 Conclusions 1127 Channel Phase Transition 1177.1 Introduction to MottFET and PhaseFET 1177.2 Theory of electronic phase transition 1187.3 Theory of MottFET 1237.4 Theory of PhaseFET 1277.5 Conclusions 1308 Current Driven Phase Transition 1358.1 Steep switching in RTD, TFET, and NEMFET 1368.2 RTD: Device structure and band diagram 1368.3 Single Electron Transistors 1418.4 Principles of Tunnel FET 1448.5 NEMS-relay as a logic transistor, NEMFET 1498.6 Conclusions 1539 SuperFET 1579.1 Negative Capacitance Tunnel FET (NC-TFET) 1589.2 Phase-Change Tunnel FET (PC-TFET) 1599.3 Conclusions 161III Phase Transition in Memories 16310 Two-terminal non-volatile memories 16710.1 Introduction 16810.2 Physics of FeRAM Memory 16810.3 Physics of RRAM memory 17510.4 Physics of Phase change memory 18210.5 Memories based on Tunnel Junction 18610.6 Conclusions 18811 FeFET 19311.1 Introduction 19311.2 Device structure and I − V characteristics 19411.3 Design of FeFET gate stack 19511.4 Threshold voltage and Memory Window 19611.5 Conclusions 205IV Phase Transition in Biosensors 20912 Frequency and Amplitude Phase Transition in BioMEMS 21312.1 Introduction 21312.2 The classical cantilever BioMEMS 21412.3 Bifurcation biosensing and amplitude phase transition 21912.4 Conclusions 22213 Phase-Transition in Electro-mechanical Biosensors 22513.1 Introduction 22513.2 Principle of Operation of FlexureFET 22613.3 Biomolecule adsorption changes spring constant 22913.4 Signal-to-Noise Ratio 23213.5 Conclusions 23614 Phase-Transition in Potentiometric Nano-Biosensors 23914.1 Introduction 23914.2 Charging of the oxide/electrolyte surface 24114.3 Qsurf is balanced by Qdl and Qs 24314.4 Sensor I-V Characteristics 24514.5 Figures of merit: Sensitivity and buffer capacity 24614.6 NCFET improves ISFET sensitivity 24814.7 Signal-to-noise ratio of ISFET and NC-ISFET 25014.8 Conclusions 252V Phase transition in Circuits 25515 Circuit Applications of Phase-Transition Transistors 25915.1 Introduction 25915.2 CMOS Inverter with NCFET 26015.3 Performance of an SRAM Cell with NCFET 26115.4 Ring Oscillator with NCFET 26415.5 A PhaseFET inverter 26615.6 RO and PTM-based Relaxation Oscillator 26815.7 Conclusions 27016 NEMFET Logic Circuits 27316.1 Introduction 27316.2 4-T and 6-T relays for complementary logic 27416.3 An inverter created by 4-T NEMFETs 27516.4 4-T NEM-relay can implement Complex Logic 27716.5 6-T see-saw logic 27816.6 Conclusions 27917 Neuromorphic Circuits 28317.1 The need for a new computing model 28317.2 Introduction to Neural Networks 28417.3 Operation of ”non-spiking” NNs 28717.4 Challenges of NN based on phase-transition memories 29017.5 Cross-bar architecture with FeFET 29417.6 Conclusions 29618 Oscillator-based Phase Logic 3018.1 Phase-based logic vs other logic models 30118.2 Sub-Harmonic Injection Locking (SHIL) creates oscillators with discrete phases 30318.3 Boolean logic with Coupled Oscillators 30918.4 Coupled oscillators solve optimization problems 31018.5 Conclusions 31719 Conclusions and Outlook 321VI Appendices 325Appendix A Fundamentals of Semiconductor Physics 327A.1 Introduction 327A.2 Conclusions 331Appendix B Theory of Classical MOSFET 333B.1 Device structure and Operating principle 333B.2 Drain Current Analytical Model 334B.3 Conclusions 348Appendix C MOSFET as charge, pH, and image sensors 349C.1 Introduction: MOSFET is a versatile device 349C.2 Conclusions 353Appendix D Basic Digital Circuit Elements 355D.1 Introduction 355D.2 CMOS Inverter 356D.3 SRAM 359D.4 DRAM 360D.5 Ring Oscillator 361D.6 Conclusions 363Appendix E Minimum Energy, Maximum Flow, and Maximum Entropy 365E.1 Background and Introduction 365E.2 Lagrange Principle unifies Conservative and Dissipative Systems. 369Appendix F Energy-Power Landscape of Semiconductor Memories 375F.1 Introduction 375F.2 DRAM and Flash Memory store information by minimizing electrostatic energy 375F.3 SRAM state defined by power minimization 380F.4 Frustrated Stability of a Ring Oscillator 383F.5 Conclusions 384Appendix G Low power Boltzmann Electronics 385G.1 Introduction 385G.2 Cryogenic electronics reduces S, but increase ION/IOFF ratio 386G.3 Near Threshold Computing reduces VDD → VT 388G.4 Approximate Computing trades off precision for power 388G.5 Conclusions 390Appendix H Model Parameters 393H.1 Part II - NCFET 393H.2 Part II - PhaseFET Phenomenological Model 394H.3 Part III 395H.4 Part III - FeFET Simulation 397H.5 Part IV 398H.6 Appendix - CMOS Inverter 398Appendix I List of Symbols 401Appendix J Physical constants