O Skole Gomostruktur N-, P-GAAS(110)

V rezul'tate izmereniy fotoelektronnykh spektrov urovnya Ga3d posle skola in situ po ploskosti (110)legirovannykh poluprovodnikov n-,p-GaAs dlya 14-ti nominal'no identichnykh p-n perekhodov i zerkal'no ploskikh pod opticheskim mikroskopom, byli polucheny polozheniya urovnya Fermi dlya n- i p- sloev. Issledovalos' takzhe dvumernoe fotoemissionnoe izobrazhenie p-n perekhoda s ispol'zovaniem puchka sinkhrotronnogo izlucheniya (diametr 0.7 mkm, energiya 95 eV, int.~10E10 fot./c). Poluchennaya srednyaya velichina izgiba zon otnositel'no polozheniya ideal'nykh ploskikh zon, kharakternykh dlya otsutstviya poverkhnostnykh defektov, sostavila 0.12+/-0.05 eV dlya p- sloya, i 0.16+/-0.08 eV dlya n- sloya, pri razreshenii spektrometra <0.15 eV. Rezul'taty eksperimentov, privodyashchie k raznoy stepeni otlichiya ot usloviya ploskikh zon dlya kazhdogo skola, ob"yasnyayutsya vneshnimi lokal'nymi mikroskopicheskimi defektami skola, kotorye mogut poyavlyat'sya sluchayno i nepredskazuemo, poskol'ku dinamika sistemy pri skole yavlyaetsya lineynym protsessom mnogikh tel i mnogikh stepeney svobody.