bokomslag Nonvolatile Memory Design
Data & IT

Nonvolatile Memory Design

Hai Li Yiran Chen

Pocket

2369:-

Funktionen begränsas av dina webbläsarinställningar (t.ex. privat läge).

Uppskattad leveranstid 7-11 arbetsdagar

Fri frakt för medlemmar vid köp för minst 249:-

Andra format:

  • 204 sidor
  • 2017
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
  • Författare: Hai Li, Yiran Chen
  • Illustratör: 10 black & white tables 175 black & white illustrations
  • Format: Pocket/Paperback
  • ISBN: 9781138076631
  • Språk: Engelska
  • Antal sidor: 204
  • Utgivningsdatum: 2017-03-29
  • Förlag: CRC Press