Del 33 - Selected Topics in Electronics and Systems
Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance
Inbunden, Engelska, 2004
Av SHUR M S, Robert F Davis, Michael S Shur, Harry B Dietrich, Usa) Davis, Robert F (North Carolina State Univ, Usa) Shur, Michael S (Rensselaer Polytechnic Inst, Usa) Dietrich, Harry B (Office Of Naval Research, Robert F. Davis, Michael S. Shur
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The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Produktinformation
- Utgivningsdatum2004-05-12
- Mått179 x 261 x 22 mm
- Vikt650 g
- FormatInbunden
- SpråkEngelska
- SerieSelected Topics in Electronics and Systems
- Antal sidor300
- FörlagWorld Scientific Publishing Co Pte Ltd
- ISBN9789812388445