• The Building Blocks.- Power Analysis for CMOS Circuits.- Temperature-dependent MOS Device Modeling.- Thermal Simulation for VLSI Systems.- Fast-timing Electrothermal Simulation.- The Applications.- Temperature-dependent Electromigration Reliability.- Temperature-driven Cell Placement.- Temperature-driven Power and Timing Analysis.

From the Foreword: 'Continuing increases in the levels of circuit integration and concomitant increases in performance are sustaining the trend of increasing power dissipation in VLSI systems. A consequence is that the impact of temperature on the successful operation and reliability of devices must be comprehended during the design process...This text provides a comprehensive formulation of the electrothermal analysis problem beginning with a summary of the sources of power dissipation in CMOS circuits and followed by a formulation of the effect of temperature on MOS devices.' Dr. Ralph K. Cavin, Vice President, Semiconductor Research Corporation

• The Building Blocks.- Power Analysis for CMOS Circuits.- Temperature-dependent MOS Device Modeling.- Thermal Simulation for VLSI Systems.- Fast-timing Electrothermal Simulation.- The Applications.- Temperature-dependent Electromigration Reliability.- Temperature-driven Cell Placement.- Temperature-driven Power and Timing Analysis.

From the Foreword: 'Continuing increases in the levels of circuit integration and concomitant increases in performance are sustaining the trend of increasing power dissipation in VLSI systems. A consequence is that the impact of temperature on the successful operation and reliability of devices must be comprehended during the design process...This text provides a comprehensive formulation of the electrothermal analysis problem beginning with a summary of the sources of power dissipation in CMOS circuits and followed by a formulation of the effect of temperature on MOS devices.' Dr. Ralph K. Cavin, Vice President, Semiconductor Research Corporation

• The Building Blocks.- Power Analysis for CMOS Circuits.- Temperature-dependent MOS Device Modeling.- Thermal Simulation for VLSI Systems.- Fast-timing Electrothermal Simulation.- The Applications.- Temperature-dependent Electromigration Reliability.- Temperature-driven Cell Placement.- Temperature-driven Power and Timing Analysis.

From the Foreword: 'Continuing increases in the levels of circuit integration and concomitant increases in performance are sustaining the trend of increasing power dissipation in VLSI systems. A consequence is that the impact of temperature on the successful operation and reliability of devices must be comprehended during the design process...This text provides a comprehensive formulation of the electrothermal analysis problem beginning with a summary of the sources of power dissipation in CMOS circuits and followed by a formulation of the effect of temperature on MOS devices.' Dr. Ralph K. Cavin, Vice President, Semiconductor Research Corporation