Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy 1
bokomslag Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy
Psykologi & pedagogik

Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy

Michael R Hogsed • Michael R Hogsed

Pocket

979:-

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  • 208 sidor
  • 2012
  • Författare: Michael R Hogsed, Michael R Hogsed
  • Format: Pocket/Paperback
  • ISBN: 9781286861233
  • Språk: Engelska
  • Antal sidor: 208
  • Utgivningsdatum: 2012-10-26
  • Förlag: Biblioscholar

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