Tunneling in Electrically Biased Semiconductor Multibarrier Systems

The basic aim of the book is to report on the investigations of the effect of uniform electric field on the resonant tunneling phenomena and its time-dependent aspects in semiconductor multibarrier systems. The introductory chapter of the book sets out the basic principles related to tunneling related issues. In other chapters the authors deal with, in detail, the effect of electrical bias on band structure, resonant tunneling states and resonant tunneling lifetime in case of such low-dimensional systems. Covering the key theoretical and experimental aspects of this active area of research, the book will be of great value to the students of quantum transport physics and device engineering, as well as to researchers in both these fields.