Multi-valley Semiconductors

The features of the effects arising in silicon and germanium single crystals under the influence of nuclear irradiation, various regimes of heat treatment, and uniaxial mechanical loads were considered; the regularities of the processes of formation and transformation of defects as a result of irradiation and thermal annealings were established; the specificity of interdefect and impurity-defect interactions was analyzed in connection with the presence of background and dopant impurities in crystals in a wide range of concentrations; the features of the influence of surface electronic processes on the formation of silicon surface-barrier detector structures were revealed; the slow regimes of etching for the manufacture of detectors of plane-parallel geometry were developed; the surface-barrier technology for manufacturing silicon spectrometric detectors was optimized. The monograph is intended for researchers and specialists in the field of radiation physics of semiconductors and solid-state physics.