bokomslag Microstructure and Optoelectronics Characterizations of GaxSb1-x/GaAs
Vetenskap & teknik

Microstructure and Optoelectronics Characterizations of GaxSb1-x/GaAs

Jalaukhan Ali Alias Maysoon Al-Lamy Hussein

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  • 140 sidor
  • 2015
Developments of narrow gap semiconductor physics have been closely related to the development of the science and technology of infrared optical electronics in which narrow gap semiconductors have played a vital role in detectors and emitters, and other high speed devices. Antimony-based technology is very promising for low voltage millimeter-wave (mm-wave) integrated circuits (ICs), as well as very highspeed, low-power digital ICs. Among the many potential applications are digitally beam-steered phased array receivers, particularly those deployed in space; 80-160 Gbit/s optical communication systems; unmanned reconnaissance vehicles; and mobile, battery-powered systems.
  • Författare: Jalaukhan Ali, Alias Maysoon, Al-Lamy Hussein
  • Format: Pocket/Paperback
  • ISBN: 9783659716645
  • Språk: Engelska
  • Antal sidor: 140
  • Utgivningsdatum: 2015-08-06
  • Förlag: LAP Lambert Academic Publishing