June 16

Inbunden, Engelska, 1973

AvGörlich

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Produktinformation

Utgivningsdatum1973-01-14
Mått170 x 240 x undefined mm
Vikt1 021 g
FormatInbunden
SpråkEngelska
Antal sidor504
FörlagDe Gruyter
ISBN9783112472750

Frontmatter -- Classification Scheme -- Contents -- Systematic List -- Beview Article -- Condensation of Non-Equilibrium Charge Carriers in Semiconductors -- Original Papers -- On the Thermoactive Nature of Plastic Deformation of a-Al2O3 Crystals -- Dislocations Energy in Deformed Copper Crystals -- Thermostimulated Conductivity in Organic Dyes (Rhodamine 6G) -- Study of the Mechanism of Radiative Recombination in Vitreous and Monocrystalline Arsenic Selenide -- Near Infrared Optical and Photoelectric Properties of Cu2O -- Free Carrier Reflectivity in Optically Homogeneous Silicon -- Thickness Dependence of the Electrical Transport Properties of Germanium Films -- Susceptibility and Lattice Parameter of Single K1-x RbxI Crystals -- Cadmium Diffused InSb Tunnel Junctions -- New Efficient Method for Calculating Hot Electron Effects Applied to n-Ge -- An Effect of Simultaneous Reflection on Anomalous Transmission Patterns of Germanium -- Properties of 1 MeY Electron-Irradiated Defect Centers in p-Type Silicon -- High-Field Domain Solutions in a Radial Geometry -- A New Model for the CuxS:CdS Photovoltaic Cell -- Field Emission and Surface States on ZnO (0001) -- Twinning Faults in Epitaxial Films of Germanium Telluride and GeTe-SnTe Alloys -- Slow Wall Motion in Oxidized Permalloy Films -- The Influence of Point-Defect Clusters on Fatigue Hardening of Copper Single Crystals -- Effect of Pressure on the Curie Point of Cr1-3Te System with the Pseudo-Ni As-Type Structure -- Diffusion of Thallium in Selenium and on the Reactivity of Both Elements -- Displaced Lines in Kikuchi Patterns -- Relaxation Measurements on Ferromagnetic Rare Earth Hydroxides -- Double-Acceptor Cathodoluminescence in Zinc Telluride -- Preparation and Electrical Properties of Al-ALN-Si Structures -- Some Aspects of the Growth and Structure of Electroless Deposited Films -- The Plastic Deformation Behavior of Mo Single Crystals under Compression -- General Transport Theory of Noise in p-n Junction-Like Devices IV. Terminal Noise of p+-n Diodes at High Injection -- Electronic Properties of the Si—SiO2 Interface as a Function of Oxide Growth Conditions -- Internal Friction in Nickel Containing Hydrogen Effect of Relaxation and Trapping of Dislocations by Hydrogen -- Ionic Conductivity of Single Crystals of CsCl -- The Preparation and Optical Properties of Small Silver Particles in Glass -- Stage I Recovery of Molybdenum Irradiated at 4.2 °K with Electrons of Different Energies -- Charge Transport through the Cadmium-Selenium Interface -- Evolution of Ferroelectric Domains in TGS Single Crystals -- Kinetics of the B2 - B1 Phase Transition in CsCl -- NMR of 59Co in K3Co(CN)6(I) -- The Heat Capacity of Lead from 300 to 850 °K Conversion of Cp to Cv for Solid Lead -- On the Theory of Thermal Switching in Semiconducting Devices -- The Recovery of Cold-Worked Chromium -- Low-Temperature Phase Transformation in the Vanadium-Hydrogen System -- Détermination des éléments de macle pour les macles mécaniques des sesquioxydes de terres rares de structure monoclinique -- Investigation of Thermal Oxide Films of Silicon by Infrared Absorption -- Temperature Dependence of Some Properties of NaTh2 (P04)3 Ferroelectric Crystals -- Sbort Notes -- The Ordering of Hydrogen in ?-Tantalum Hydride -- Crystal Perfection of Tetraphenyl Tin and Its Isomorphs -- Radiation Damage Induced by Channeling of High Energy Electrons -- Investigation of Plastically Deformed NaCl by X-Ray Topography and Electron Microscopy -- Lithium Nuclear Magnetic Resonance in Lithium Formate Monohydrate -- Superconducting Energy Gaps and Transition Temperatures of Disordered Cadmium and Zinc Films -- The Influence of a High-Conducting Bubble in VO2 Switching Devices -- Superconductivity in the Palladium-Hydrogen and Palladium-Nickel-Hydrogen Systems -- Retarding Field Dependences of Thermostimulated Electron Emission (TSEE) from KCl-In and KCl-Ag -- L'alliage 60%Cu-20%Ni-20%Mn â la température critique -