Ions Induced Nanostructures in Si and GAAS

The Swift Heavy Ion irradiation induced surface nanostructuring and modifications of semiconducting materials and its devices are of significances both from fundamental as well as applied aspects and have not been either studied in details or related effects are yet to be fully understood.It has a direct relevance to simulate the degradation effects of electronic devices in space and in high radiation environment. The swift heavy ion in MeV range penetrates the semiconducting substrate quite deep in the bulk and hence a deep buried implantation layer can be worked out by swift heavy ion irradiation. Preset study is an attempt to understand these effects in much better way. The Effect of swift heavy ions on Semiconductor surfaces (Si & GaAs) and Metal /Semiconductor devices on gallium arsenide have been studied by Atomic Force Microscopy for surface morphology,Current-Voltage and Capacitance-Voltage studies for defects states and X-ray Photo electron Spectroscopy for chemical changes and elemental analysis at the device interface and Scanning Electron Microscopy with Energy Dispersive x-ray for the quantitative elemental analysis of the irradiated surfaces.